3.0 Volt-only Page Mode Flash Memory Featuring 110 Nm Mirrorbit?⠐rocess Technology

The S29GL512N S29GL256N S29GL128N family of devices are 3.0V single power Flash memory manufac- tured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that CAN also function as an 8-bit wide data bus by using the BYTE# input. The device CAN be programmed either in the host system or in standard EPROM programmers. Access times as fast as 90 ns S29GL128N S29GL256N , 100 ns S29GL512N are available. Note that each access time has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide on page 6 and the Ordering Infor- mation on page 12. The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. By Meet Spansion Inc.
S29GL-N 's PackagesS29GL-N 's pdf datasheet

S29GL-N Pinout, Pinouts
S29GL-N pinout,Pin out
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