RF POWER Transistors, LDMOST Plastic Family N-Channel Enhancement-mode Lateral MOSFETs

The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF powe Transistor designed for Broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and Broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. By STMicroelectronics
SD56120 's PackagesSD56120 's pdf datasheet



SD56120 Pinout, Pinouts
SD56120 pinout,Pin out
This is one package pinout of SD56120,If you need more pinouts please download SD56120's pdf datasheet.

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