• Product pinout
  • Description
  • CY2310ANZ,3.3V SDRAM Buffer For Mobile PCs With 4 SO-DIMMs
  • The CY2310ANZ is a 3.3V buffer designed to distribute high-speed clocks in mobile PC applications. The part has 10 outputs, 8 of which can be used to drive up to four SDRAM SO-DIMMs, and the remaining can be used for external feedback to a PLL. The device ...
  • K4M51163PC,Mobile SDRAM
  • The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M51163LC,8M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...
  • K4M511633C,8M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M511633C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...
  • K4M51323PC,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M51323PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M51323LC,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M513233C,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M56163PG,4M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M56163LG,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...
  • K4M561633G,4M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...
  • K4M56323PG,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M56323LG,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M56323LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M563233G,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M563233G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M28163PH,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M28163PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M28163LH,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M281633H,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M281633H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M28323PH,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M28323PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M28323LH,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M28323LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M283233H,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M64163PK,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M64163PK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock, ...
  • K4M64163LK,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M64163LK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4M641633K,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
  • The K4M641633K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • K4J52324QC,512Mbit GDDR3 SDRAM
  • The K4J52324QC is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to ...
  • K4J55323QI,256Mbit GDDR3 SDRAM
  • The K4J55323QI is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance up ...
  • K4J55323QG,256Mbit GDDR3 SDRAM
  • The K4J55323QG is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance up ...
  • K4N51163QE,512Mbit GDDR2 SDRAM
  • The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the following ...
  • K4N51163QC,512Mbit GDDR2 SDRAM
  • The 512Mb gDDR2 SDRAM K4N51163QC chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply ...
  • K4N56163QI,256Mbit GDDR2 SDRAM
  • The 256Mb gDDR2 SDRAM K4N56163QI chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the ...
  • K4N56163QG,256Mbit GDDR2 SDRAM
  • FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The ...
  • K4D551638H,256Mbit GDDR SDRAM
  • The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance ...
  • K4D261638K,128Mbit GDDR SDRAM
  • The K4D261638K is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance ...
  • K4S640832N,64Mb N-die SDRAM Specification
  • The K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise ...
  • K4S641632N,64Mb N-die SDRAM Specification
  • The K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise ...
  • W9464G6IH,DDR SDRAM
  • The W9464G6IH is a 64M DDR SDRAM and speed involving -4/-5/-6Status: Mass Production
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  • W9464G6BH,DDR SDRAM
  • The W9464G6BH is a 64M DDR SDRAM and speed involving -5/-6/-75Status: Mass Production
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  • W9412G6CH,DDR SDRAM
  • W9412G6CH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 2M words 4 banks 16 bits. Using pipelined architecture and 0.11m process technology, W9412G6CH delivers a data bandwidth of up to 444M words per ...
  • W9412G2CB,DDR SDRAM
  • W9412G2CB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 1,048,576 words 4 banks 32 bits. Using pipelined architecture and 0.11 m process technology, W9412G2CB delivers a data bandwidth of up to 400M words ...
  • W9412G6IH,DDR SDRAM
  • W9412G6IH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 2M words 4 banks 16 bits. W9412G6IH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer ...
  • W9425G6DH,DDR SDRAM
  • W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. Using pipelined architecture and 0.11 m process technology, W9425G6DH delivers a data bandwidth of up to 500M words ...
  • W9425G8DH,DDR SDRAM
  • W9425G8DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 8,388,608 words 4 banks 8 bits. Using pipelined architecture and 0.11 m process technology, W9425G8DH delivers a data bandwidth of up to 400M words per ...
  • W9425G6EH,DDR SDRAM
  • W9425G6EH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. W9425G6EH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer ...
  • W948D6F,Low Power DDR SDRAM
  • This is a 256Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits / 4M words x 4 banks x 16bitsIt uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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  • W948D2F,Low Power DDR SDRAM
  • This is a 256Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits / 4M words x 4 banks x 16bitsIt uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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  • W949D6B,Low Power DDR SDRAM
  • This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 32bits / 8M words x 4 banks x 16bitsor 16M words x 4 banks x 8bits It uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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  • W989D6B,Low Power SDR SDRAM
  • This is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits / 8M words x 4 banks x 16bitsor 16M words x 4 banks x 8bits It uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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  • W9816G6CB,SDRAM
  • The W9816G6CB is a 16M SDRAM and speed involving -6/-7Status: Mass Production
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  • W9816G6IH,SDRAM
  • The W9816G6IH is a 16M SDRAM and speed involving -5/-6/-7/-6I/-7IStatus: Mass Production
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  • W9864G6GH,SDRAM
  • The W9864G6GH is a 64M SDRAM and speed involving -5/-6/-6I/-7/-7SStatus: Mass Production
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  • W9864G2GH,SDRAM
  • The W9864G2GH is a 64M SDRAM and speed involving -5/-6/-6C/-6I/-7status: Mass Production
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  • W9864G6GB,SDRAM
  • The W9864G6GB is a 64M SDRAM and speed involving -6I/-7/-7IStatus: Mass Production
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  • W9864G6IH,SDRAM
  • The W9864G6IH is a 64M SDRAM and speed involving -5/-6/-7/-7SStatus: Mass Production
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  • W9812G6GH,SDRAM
  • The W9812G6GH is a 128M SDRAM and speed involving -6/-6C/-6F/-6I/-75Status: Mass Production
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  • W9812G2GH,SDRAM
  • The W9812G2GH is a 128M SDRAM and speed involving -5/-6/-6C/-6I/-75Status: Mass Production
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  • W9812G2GB,SDRAM
  • The W9812G2GB is a 128M SDRAM and speed involving -6/-6I/-75Status: Mass Production
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  • W9812G6IH,SDRAM
  • The W9812G6IH is a 128M SDRAM and speed involving -5/-6/-6C/-7/-75Status: Mass Production
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  • W9825G6DH,SDRAM
  • The W9825G6DH is a 256M SDRAM and speed involving -6/-6C/-6I/-75/75IStatus: Mass Production
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  • W9825G2DB,SDRAM
  • The W9825G2DB is a 256M SDRAM and speed involving -6/-6I/-75/75IStatus: Mass Production
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  • W9825G6EH,SDRAM
  • The W9825G6EH is a 256M SDRAM and speed involving -6/-6C/-75Status: Mass Production
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  • HY57V641620FTP,64Mb Synchronous DRAM Based
  • The Hynix HY57V641620F(L/S)TP series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620F(L/S)TP is organized as 4banks of 1,048,576x16.
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  • HY5V66FF6P,64Mb Synchronous DRAM Based On
  • The Hynix HY5V66F(L)F6P series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66F(L)F6P is organized as 4banks of 1,048,576 x 16. HY5V66F(L)F6P is offering fully ...
  • HY5V66FFP,64Mb Synchronous DRAM Based On 1M X 4Bank X16 I/O
  • The Hynix HY5V66F(L)FP-xx series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66F(L)F(P)-xxI is organized as 4banks of 1,048,576 x16. HY5V66F(L)FP-xx series is ...
  • HY57V28820ET,128Mb Synchronous DRAM Based On 4M X 4Bank X8 I/O
  • The Hynix HY57V28820E(L)T(P) series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V28820E(L)T(P) series is organized as 4banks of 4,194,304 x 8. HY57V28820E(L)T(P) ...