SDRAM datasheet,SDRAM Pinout,SDRAM application circuits

SDRAM

Product pinout
Description

M65KG512AB,512Mbit (4 Banks X 8 Mb X 16) 1.8 V Supply, DDR Low Power SDRAM
The M65KG512AB is a 512Mbit Double Data Rate (DDR) Low Power Synchronous DRAM (LPSDRAM). The memory array is organized as 4 Banks of 8,388,608 words of 16 bits each. ...

M65KA256AF,256 Mbit (4 Banks X 4M X 16) , 133 MHz Clock Rate, 1.8 V Supply, Low Power SDRAM
The M65KA256AF is a 256Mbit Low Power Synchronous DRAM (SDRAM). The memory array is organized as 4 Banks of 4,194,304 Words of 16 bits each. The LPSDRAM achieves low power consumption and high-speed data transfer using the pipeline architecture. ...

M65KC512AB,512Mbit (4 Banks X 4M X 32) , 133MHz Clock Rate,1.8 V Supply, Low Power SDRAM
The M65KC512AB is a 512Mbit Low Power Synchronous DRAM (SDRAM). The memory array is organized as 4 Banks of 4,194,304 Words of 32 bits each. The LPSDRAM achieves low power consumption and high-speed data transfer using the pipeline architecture. It is ...

M65KA256AL,256Mbit (4 Banks X 4M X 16), 105MHz Clock Rate, 1.8V Supply, Low Power SDRAM
The M65KA256AL is a 256Mbit Low Power Synchronous DRAM (SDRAM). The memory array is organized as 4 Banks of 4,194,304 Words of 16 bits each. The LPSDRAM achieves low power consumption and high-speed data transfer using the pipeline architecture. ...

M65KG256AB,256Mbit (4 Banks X 4M X 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
The M65KG256AB is a 256Mbit Double Data Rate (DDR) Low Power Synchronous DRAM (LPSDRAM). The memory array is organized as 4 Banks of 4,194,304 Words of 16 bits each. The device achieves low power consumption and very high-speed data transfer using the ...

M65KG256AF,256Mbit (4 Banks X 4M X 16) 1.8 V Supply, 133MHz, DDR Low Power SDRAM
The M65KG256AF is a 256Mbit Double Data Rate (DDR) Low Power Synchronous DRAM (LPSDRAM). The memory array is organized as 4 Banks of 4,194,304 Words of 16 bits each. The device achieves low power consumption and very high-speed data transfer using the ...

CY2313ANZ,13 Output, 3.3V SDRAM Buffer For Desktop PCs With 3 DIMMs
The CY2313ANZ is a 3.3V buffer designed to distribute high-speed clocks in desktop PC applications. The part has 13 outputs, 12 of which can be used to drive up to three SDRAM DIMMs, and the remaining can be used for external feedback to a PLL. The ...

CY2318ANZ,18 Output, 3.3V SDRAM Buffer For Desktop PCs With 4 DIMMs
The CY2318ANZ is a 3.3V buffer designed to distribute high-speed clocks in PC applications. The part has 18 outputs, 16 of which can be used to drive up to four SDRAM DIMMs, and the remaining can be used for external feedback to a PLL. The device operates ...

CY2310ANZ,3.3V SDRAM Buffer For Mobile PCs With 4 SO-DIMMs
The CY2310ANZ is a 3.3V buffer designed to distribute high-speed clocks in mobile PC applications. The part has 10 outputs, 8 of which can be used to drive up to four SDRAM SO-DIMMs, and the remaining can be used for external feedback to a PLL. The device ...

K4M51163PC,Mobile SDRAM
The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M51163LC,8M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...

K4M511633C,8M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M511633C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...

K4M51323PC,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M51323PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M51323LC,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M513233C,4M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M56163PG,4M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M56163LG,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...

K4M561633G,4M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system ...

K4M56323PG,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M56323LG,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M56323LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M563233G,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M563233G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M28163PH,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M28163PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M28163LH,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M281633H,2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M281633H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M28323PH,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M28323PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M28323LH,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M28323LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M283233H,1M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M64163PK,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M64163PK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock, ...

K4M64163LK,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M64163LK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4M641633K,1M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA
The K4M641633K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...

K4J52324QE,512Mbit GDDR3 SDRAM FOR 2M X 32Bit X 8 Bank GDDR3 SDRAM
The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to ...

K4J52324QC,512Mbit GDDR3 SDRAM
The K4J52324QC is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to ...

K4J55323QI,256Mbit GDDR3 SDRAM
The K4J55323QI is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance up ...

K4J55323QG,256Mbit GDDR3 SDRAM
The K4J55323QG is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance up ...

K4N51163QE,512Mbit GDDR2 SDRAM
The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the following ...

K4N51163QC,512Mbit GDDR2 SDRAM
The 512Mb gDDR2 SDRAM K4N51163QC chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The chip is designed to comply ...

K4N56163QI,256Mbit GDDR2 SDRAM
The 256Mb gDDR2 SDRAM K4N56163QI chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to comply with the ...

K4N56163QG,256Mbit GDDR2 SDRAM
FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The ...

K4D551638H,256Mbit GDDR SDRAM
The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance ...

K4D261638K,128Mbit GDDR SDRAM
The K4D261638K is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance ...

K4D263238K,128Mbit GDDR SDRAM 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe And DLL
The K4D263238K is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to ...

K4S640832N,64Mb N-die SDRAM Specification
The K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise ...

K4S641632N,64Mb N-die SDRAM Specification
The K4S640832N / K4S641632N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise ...

MB81ES171625-15-X,2 ????512 K ????16 BIT / 2 ????256 K ????32 BIT TM SINGLE DATA RATE I/F FCRAM (Extended Temp. Version) Consumer/Embedded Application Specific Memory For SiP
The Fujitsu MB81ES171625/173225 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 bit memory cells accessible in a 2,12K,6 bit / 2,56K,2 bit format. The MB81ES171625/173225 features a fully synchronous operation referenced to a positive ...

MB81ES123245-10,128 M-BIT (4-BANK ?1 M-WORD ?32-BIT) TM SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory For SiP
The Fujitsu MB81ES123245 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 134,217,728 memory cells accessible in a 32-bit format. The MB81ES123245 features a fully synchro- nous operation referenced to a positive clock edge ...

W9464G6IH,DDR SDRAM
The W9464G6IH is a 64M DDR SDRAM and speed involving -4/-5/-6Status: Mass Production
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W9464G6BH,DDR SDRAM
The W9464G6BH is a 64M DDR SDRAM and speed involving -5/-6/-75Status: Mass Production
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W9412G6CH,DDR SDRAM
W9412G6CH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 2M words 4 banks 16 bits. Using pipelined architecture and 0.11m process technology, W9412G6CH delivers a data bandwidth of up to 444M words per ...

W9412G2CB,DDR SDRAM
W9412G2CB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 1,048,576 words 4 banks 32 bits. Using pipelined architecture and 0.11 m process technology, W9412G2CB delivers a data bandwidth of up to 400M words ...

W9412G6IH,DDR SDRAM
W9412G6IH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM); organized as 2M words 4 banks 16 bits. W9412G6IH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer ...

W9425G6DH,DDR SDRAM
W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. Using pipelined architecture and 0.11 m process technology, W9425G6DH delivers a data bandwidth of up to 500M words ...

W9425G8DH,DDR SDRAM
W9425G8DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 8,388,608 words 4 banks 8 bits. Using pipelined architecture and 0.11 m process technology, W9425G8DH delivers a data bandwidth of up to 400M words per ...

W9425G6EH,DDR SDRAM
W9425G6EH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words 4 banks 16 bits. W9425G6EH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer ...

W948D6F,Low Power DDR SDRAM
This is a 256Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits / 4M words x 4 banks x 16bitsIt uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
...

W948D2F,Low Power DDR SDRAM
This is a 256Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits / 4M words x 4 banks x 16bitsIt uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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W949D6B,Low Power DDR SDRAM
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 32bits / 8M words x 4 banks x 16bitsor 16M words x 4 banks x 8bits It uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
...

W989D6B,Low Power SDR SDRAM
This is a 512Mb Low Power SDR SDRAM organized as 4M words x 4 banks x 32bits / 8M words x 4 banks x 16bitsor 16M words x 4 banks x 8bits It uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
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W9816G6CB,SDRAM
The W9816G6CB is a 16M SDRAM and speed involving -6/-7Status: Mass Production
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W9816G6IH,SDRAM
The W9816G6IH is a 16M SDRAM and speed involving -5/-6/-7/-6I/-7IStatus: Mass Production
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W9864G6GH,SDRAM
The W9864G6GH is a 64M SDRAM and speed involving -5/-6/-6I/-7/-7SStatus: Mass Production
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W9864G2GH,SDRAM
The W9864G2GH is a 64M SDRAM and speed involving -5/-6/-6C/-6I/-7status: Mass Production
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W9864G6GB,SDRAM
The W9864G6GB is a 64M SDRAM and speed involving -6I/-7/-7IStatus: Mass Production
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W9864G6IH,SDRAM
The W9864G6IH is a 64M SDRAM and speed involving -5/-6/-7/-7SStatus: Mass Production
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W9812G6GH,SDRAM
The W9812G6GH is a 128M SDRAM and speed involving -6/-6C/-6F/-6I/-75Status: Mass Production
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W9812G2GH,SDRAM
The W9812G2GH is a 128M SDRAM and speed involving -5/-6/-6C/-6I/-75Status: Mass Production
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W9812G2GB,SDRAM
The W9812G2GB is a 128M SDRAM and speed involving -6/-6I/-75Status: Mass Production
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W9812G6IH,SDRAM
The W9812G6IH is a 128M SDRAM and speed involving -5/-6/-6C/-7/-75Status: Mass Production
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W9825G6DH,SDRAM
The W9825G6DH is a 256M SDRAM and speed involving -6/-6C/-6I/-75/75IStatus: Mass Production
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W9825G2DB,SDRAM
The W9825G2DB is a 256M SDRAM and speed involving -6/-6I/-75/75IStatus: Mass Production
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W9825G6EH,SDRAM
The W9825G6EH is a 256M SDRAM and speed involving -6/-6C/-75Status: Mass Production
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MT18LSDT3272G-10E,256MB SDRAM RDIMM : MT18LSDT3272G-10E
256MB SDRAM RDIMM : MT18LSDT3272G-10E MT18LSDT3272G-10E SDRAM RDIMM MT18LSDT3272 256M MT18LSDT6472 512M MT18LSDT12872 1G ...

MT36LSDF12872G-133,1GB SDRAM RDIMM : MT36LSDF12872G-133
1GB SDRAM RDIMM : MT36LSDF12872G-133 MT36LSDF12872G-133 ...

MT36LSDT12872G-133,1GB SDRAM RDIMM : MT36LSDT12872G-133
1GB SDRAM RDIMM : MT36LSDT12872G-133 MT36LSDT12872G-133 ...

MT9LSDT1672G-133,128MB SDRAM RDIMM : MT9LSDT1672G-133
128MB SDRAM RDIMM : MT9LSDT1672G-133 MT9LSDT1672G-133 ...

MT16LSDT1664AG-13E,128MB SDRAM UDIMM : MT16LSDT1664AG-13E
128MB SDRAM UDIMM : MT16LSDT1664AG-13E MT16LSDT1664AG-13E ...

MT16LSDT3264AG-10E,256MB SDRAM UDIMM : MT16LSDT3264AG-10E
256MB SDRAM UDIMM : MT16LSDT3264AG-10E MT16LSDT3264AG-10E ...

MT16LSDT6464AY-133,512MB SDRAM UDIMM : MT16LSDT6464AY-133
512MB SDRAM UDIMM : MT16LSDT6464AY-133 MT16LSDT6464AY-133 ...

MT18LSDT1672AG-10E,128MB SDRAM UDIMM : MT18LSDT1672AG-10E
128MB SDRAM UDIMM : MT18LSDT1672AG-10E MT18LSDT1672AG-10E ...

MT18LSDT3272AG-10E,256MB SDRAM UDIMM : MT18LSDT3272AG-10E
256MB SDRAM UDIMM : MT18LSDT3272AG-10E MT18LSDT3272AG-10E ...

MT18LSDT6472AG-133,512MB SDRAM UDIMM : MT18LSDT6472AG-133
512MB SDRAM UDIMM : MT18LSDT6472AG-133 MT18LSDT6472AG-133 ...

MT2LSDT432UG-10,16MB SDRAM UDIMM : MT2LSDT432UG-10
16MB SDRAM UDIMM : MT2LSDT432UG-10 MT2LSDT432UG-10 ...

MT4LSDT1632UG-8,64MB SDRAM UDIMM : MT4LSDT1632UG-8
64MB SDRAM UDIMM : MT4LSDT1632UG-8 MT4LSDT1632UG-8 ...

MT4LSDT1664AG-10E,128MB SDRAM UDIMM : MT4LSDT1664AG-10E
128MB SDRAM UDIMM : MT4LSDT1664AG-10E MT4LSDT1664AG-10E ...

MT5LSDT1672AG-13E,128MB SDRAM UDIMM : MT5LSDT1672AG-13E
128MB SDRAM UDIMM : MT5LSDT1672AG-13E MT5LSDT1672AG-13E ...

MT16LSDF3264HG-10E,256MB SDRAM SODIMM : MT16LSDF3264HG-10E
256MB SDRAM SODIMM : MT16LSDF3264HG-10E MT16LSDF3264HG-10E ...

MT4LSDT1664HG-133,128MB SDRAM SODIMM : MT4LSDT1664HG-133
128MB SDRAM SODIMM : MT4LSDT1664HG-133 MT4LSDT1664HG-133 ...

MT8LSDT1664HG-10E,128MB SDRAM SODIMM : MT8LSDT1664HG-10E
128MB SDRAM SODIMM : MT8LSDT1664HG-10E MT8LSDT1664HG-10E ...

MT48LC16M16A2BG-75,256Mb SDRAM Component : MT48LC16M16A2BG-75
256Mb SDRAM Component : MT48LC16M16A2BG-75 MT48LC16M16A2BG-75 ...

MT48LC16M16A2P-75,256Mb SDRAM Component : MT48LC16M16A2P-75
256Mb SDRAM Component : MT48LC16M16A2P-75 MT48LC16M16A2P-75 ...

MT48LC16M4A2P-75,64Mb SDRAM Component : MT48LC16M4A2P-75
64Mb SDRAM Component : MT48LC16M4A2P-75 MT48LC16M4A2P-75 Synchronous DRAM MT48LC16M4A2 4 Meg x 4 x 4 bank MT48LC8M8A2 2 Meg x 8 x 4 bank MT48LC4M16A2 1 Meg x 16 x 4 bank ...

MT48LC16M8A2BB-75,128Mb SDRAM Component : MT48LC16M8A2BB-75
128Mb SDRAM Component : MT48LC16M8A2BB-75 MT48LC16M8A2BB-75 SDRAM MT48LC32M4A2 8 Meg x 4 x 4 bank MT48LC16M8A2 4 Meg x 8 x 4 bank MT48LC8M16A2 2 Meg x 16 x 4 bank ...

MT48LC2M32B2B5-6,64Mb SDRAM Component : MT48LC2M32B2B5-6
64Mb SDRAM Component : MT48LC2M32B2B5-6 MT48LC2M32B2B5-6 ...

MT48LC4M32B2B5-6,128Mb SDRAM Component : MT48LC4M32B2B5-6
128Mb SDRAM Component : MT48LC4M32B2B5-6 MT48LC4M32B2B5-6 ...

HY57V641620FTP,64Mb Synchronous DRAM Based
The Hynix HY57V641620F(L/S)TP series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620F(L/S)TP is organized as 4banks of 1,048,576x16.
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HY5V66FF6P,64Mb Synchronous DRAM Based On
The Hynix HY5V66F(L)F6P series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66F(L)F6P is organized as 4banks of 1,048,576 x 16. HY5V66F(L)F6P is offering fully ...

HY5V66FFP,64Mb Synchronous DRAM Based On 1M X 4Bank X16 I/O
The Hynix HY5V66F(L)FP-xx series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V66F(L)F(P)-xxI is organized as 4banks of 1,048,576 x16. HY5V66F(L)FP-xx series is ...

HY57V28820ET,128Mb Synchronous DRAM Based On 4M X 4Bank X8 I/O
The Hynix HY57V28820E(L)T(P) series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V28820E(L)T(P) series is organized as 4banks of 4,194,304 x 8. HY57V28820E(L)T(P) ...

HY57V281620FTP,128Mb Synchronous DRAM Based On 2M X 4Bank X16 I/O
The Hynix HY57V281620F(L/S)TP series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V281620E(L/S)T(P) series is organized as 4banks of 2,097,152 x 16.
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IS42S16100E,512K Words X 16 Bits X 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
ISSIs 16Mb Synchronous DRAM IS42S16100E i organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge ...

IS42S16400C1,1 Meg Bits X 16 Bits X 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
ISSI\'s 64Mb Synchronous DRAM IS42S16400C1 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising ...

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