Bi-directional P-channel Mosfet/power Switch - Vishay Siliconix

The SI3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction. Bi-directional blocking is facilitated by combining a 4-terminal symmetric P-Channel MOSFET with a body bias selector circuit*. Circuit operation automatically biases the p-channel body to the most positive source/drain potential thereby maintaining a reverse bias across the Diode present between the source/drain terminals. Off-state device blocking characteristics are symmetric, facilitating bi-directional blocking for high-side battery switching in portable products. Gate drive is facilitated by negatively biasing the Gate relative to the body potential. The off-state is achieved by biasing the Gate to the most positive supply voltage or to the body potential. The SI3831DV is available in a 6-pin TSOP-6 package rated for the 25 to 85C commercial temperature range. By Vishay Intertechnology
SI3831DV 's PackagesSI3831DV 's pdf datasheet



SI3831DV Pinout, Pinouts
SI3831DV pinout,Pin out
This is one package pinout of SI3831DV,If you need more pinouts please download SI3831DV's pdf datasheet.

SI3831DV Application circuits
SI3831DV circuits
This is one application circuit of SI3831DV,If you need more circuits,please download SI3831DV's pdf datasheet.


Related Electronics Part Number

Related Keywords:

SI3831DV Pb-Free SI3831DV Cross Reference SI3831DV Schematic SI3831DV Distributor
SI3831DV Application Notes SI3831DV RoHS SI3831DV Circuits SI3831DV footprint