Discretes - Diodes

SKR-130 is a sub package of SKN130,If you need see the description,please click SKN130 .If you need SKR-130's datasheet,please download it from below. By semikron
Part Manufacturer Description Datasheet Samples
HI5960SOICEVAL1 Renesas Electronics Corporation 12- and 14-Bit, 130 MSPS, High Speed D/A Converter Evaluation Boards
ISL73096EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128EHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128RHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128RHF/PROTO Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127RHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127RHF/PROTO Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127EHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
SKN130 's PackagesSKR-130 's pdf datasheet
SKR-130




SKR-130 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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