Diode-Thyristor Module

Diode-Thyristor Module SMDT-130 By SEMPO ELECTRONIC Limited
Part Manufacturer Description Datasheet Samples
HI5960SOICEVAL1 Renesas Electronics Corporation 12- and 14-Bit, 130 MSPS, High Speed D/A Converter Evaluation Boards
ISL73096EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128EHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128RHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128RHF/PROTO Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127RHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127RHF/PROTO Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73127EHVF Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
ISL73128EHVX Renesas Electronics Corporation $ Electrically screened to SMD # 5962-07218 $ QML qualified per MIL-PRF-38535 requirements $ Radiation tolerance $$ High dose rate (50-300rad(Si)/s): 100krad(Si) $$ Low dose rate (0.01rad(Si)/s): 50krad(Si)* $$ SEL immune: Bonded wafer dielectric isolation $ NPN gain bandwidth product (FT: 8GHz (typ) $ NPN current gain (hFE): 130 (typ) $ NPN early voltage (VA): 50V (typ) $ PNP gain bandwidth product (FT): 5.5GHz (typ) $ PNP current gain (hFE): 60 (typ) $ PNP early voltage (VA): 20V (typ) $ Noise figure (50Ω) at 1GHz: 3.5dB (typ) $ Collector-to-collector leakage: <1pA (typ) $ Complete isolation between transistors * Limit established by characterization
SMDT-130 's PackagesSMDT-130 's pdf datasheet
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SMDT-130-12
SMDT-130-14
SMDT-130-16
SMDT-130-18
130




SMDT-130 Pinout, Pinouts
SMDT-130 pinout,Pin out
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