Diode-Thyristor ModuleDiode-Thyristor Module SMDT-300 By SEMPO ELECTRONIC Limited
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| Part | Manufacturer | Description | Datasheet | Samples | |
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| UPD30550AF2-300-NN1-A | Renesas Electronics Corporation | UPD30550AF2-300-NN1-A |
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| HS3437EVI60H | Renesas Electronics Corporation | DEVELOPMENT KITS AND TOOLS, E6000 EMULATOR FOR H8/300 SERIES |
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| HS9-26C32RH-Q | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95689 $ QML qualified per MIL-PRF-38535 requirements $ 1.2 micron radiation hardened CMOS $$ Total dose: 300 krad(Si) (max) $ Latch-up free $ EIA RS-422 compatible inputs $ CMOS compatible outputs $ Input fail safe circuitry $ High impedance inputs when disabled or powered down $ Low power dissipation 138mW standby (max) $ Single 5V supply $ Full -55°C to +125°C military temperature range |
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| HS9-6664RH-8 | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95626 $ QML Qualified per MIL-PRF-38535 Requirements $ 1.2 Micron Radiation Hardened Bulk CMOS $ Total Dose 300 krad(Si) (Max) $ Transient Output Upset >5 x 108 rad(Si)/s $ LET >100 MEV-cm2/mg $ Fast Access Time 35ns (Typ) $ Single 5V Power Supply $ Single Pulse 10V Field Programmable $ Synchronous Operation $ On-Chip Address Latches $ Three-State Outputs $ NiCr Fuses $ Low Standby Current <500µA (Pre-Rad) $ Low Operating Current <15mA/MHz $ Military Temperature Range -55oC to 125oC |
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| HS1-1825AEH-Q | Renesas Electronics Corporation | $ Electrically screened to DLA SMD # 5962-99558 $ QML qualified per MIL-PRF-38535 Requirements $ Radiation environment $$ Maximum total dose: 300 krad(SI) $$ Vertical architecture provides low dose rate immunity $$ DI RSG process provides latch-up immunity $ Low start-up current: 100µA (Typical) $ Fast propagation delay: 80ns (Typical) $ 12V to 30V operation $ 1A (peak) dual output drive capability $ 5.1V reference $ Undervoltage lockout $ Programmable soft-start $ Switching frequencies to 500kHz $ Latched overcurrent comparator with full cycle restart $ Programmable leading edge blanking circuit |
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| HS9-26C32RH-8 | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95689 $ QML qualified per MIL-PRF-38535 requirements $ 1.2 micron radiation hardened CMOS $$ Total dose: 300 krad(Si) (max) $ Latch-up free $ EIA RS-422 compatible inputs $ CMOS compatible outputs $ Input fail safe circuitry $ High impedance inputs when disabled or powered down $ Low power dissipation 138mW standby (max) $ Single 5V supply $ Full -55°C to +125°C military temperature range |
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| HS1-26C32EH-Q | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95689 $ QML qualified per MIL-PRF-38535 requirements $ 1.2 micron radiation hardened CMOS $$ Total dose: 300 krad(Si) (max) $ Latch-up free $ EIA RS-422 compatible inputs $ CMOS compatible outputs $ Input fail safe circuitry $ High impedance inputs when disabled or powered down $ Low power dissipation 138mW standby (max) $ Single 5V supply $ Full -55°C to +125°C military temperature range |
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| HS0-26C32RH-Q | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95689 $ QML qualified per MIL-PRF-38535 requirements $ 1.2 micron radiation hardened CMOS $$ Total dose: 300 krad(Si) (max) $ Latch-up free $ EIA RS-422 compatible inputs $ CMOS compatible outputs $ Input fail safe circuitry $ High impedance inputs when disabled or powered down $ Low power dissipation 138mW standby (max) $ Single 5V supply $ Full -55°C to +125°C military temperature range |
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| HS1-6664RH/PROTO | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95626 $ QML Qualified per MIL-PRF-38535 Requirements $ 1.2 Micron Radiation Hardened Bulk CMOS $ Total Dose 300 krad(Si) (Max) $ Transient Output Upset >5 x 108 rad(Si)/s $ LET >100 MEV-cm2/mg $ Fast Access Time 35ns (Typ) $ Single 5V Power Supply $ Single Pulse 10V Field Programmable $ Synchronous Operation $ On-Chip Address Latches $ Three-State Outputs $ NiCr Fuses $ Low Standby Current <500µA (Pre-Rad) $ Low Operating Current <15mA/MHz $ Military Temperature Range -55oC to 125oC |
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| HS9G-26C32RH/PROTO | Renesas Electronics Corporation | $ Electrically Screened to SMD # 5962-95689 $ QML qualified per MIL-PRF-38535 requirements $ 1.2 micron radiation hardened CMOS $$ Total dose: 300 krad(Si) (max) $ Latch-up free $ EIA RS-422 compatible inputs $ CMOS compatible outputs $ Input fail safe circuitry $ High impedance inputs when disabled or powered down $ Low power dissipation 138mW standby (max) $ Single 5V supply $ Full -55°C to +125°C military temperature range |
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| SMDT-300 Pb-Free | SMDT-300 Cross Reference | SMDT-300 Schematic | SMDT-300 Distributor |
| SMDT-300 Application Notes | SMDT-300 RoHS | SMDT-300 Circuits | SMDT-300 footprint |
