• Product pinout
  • Description
  • M69AR048B,32 MBIT (2M X16) 1.8V SUPPLY, ASYNCHRONOUS PSRAM
  • The M69AR048B is a 32 Mbit (33,554,432 bit) CMOS memory, organized as 2,097,152 words by 16 bits, and is supplied by a single 1.65V to 1.95V supply voltage range. M69AR048B is a member of STMicroelectronics 1T/1C (one transistor per cell) memory ...
  • M68AW128M,2 MBIT (128K X16) 3.0V ASYNCHRONOUS SRAM
  • The M68AW128M is a 2 Mbit (2,097,152 bit) CMOS SRAM organized as 131,072 words by 16 bits. The device features fully static operation re- quiring no external clocks or timing strobes, with equal address access and cycle times. It requires a single 2.7 to ...
  • M68AF127B,1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
  • The M68AF127B is a 1Mbit (1,048,576 bit) CMOS SRAM organized as 131,072 words by 8 bits. The device features fully static operation requiring no external clocks or timing strobes, with equal ad- dress access and cycle times. It requires a single 4.5 to ...
  • M67025E,M67025E
  • The M67025E is a very low power CMOS dual port static RAM organized as 8192 bit ,16. The product is designed to be used as a stand-alone 16-bit dual port RAM or as a combination MASTER/SLAVE dual port for 32-bit or more width systems. The Atmel MASTER/SLAVE ...
  • AT60142,AT60142
  • The AT60142F AT60142G is a very low power CMOS static RAM organized as 524 288 x bits. Atmel brings the solution to applications where fast computing is as mandatory as l consumption, such as aerospace electronics, portable instruments, or ...
  • M65608E,M65608E
  • The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 A) with a fast access tim at 30 ns over ...
  • DS2423,DS2423 4kbit 1-Wire RAM With Counter
  • The DS2423 1-Wire RAM with Counters is a fully static, read/write memory for battery operation in a low-cost, six-lead TSOC, surface-mount package. The memory is organized as 16 pages of 256 bits each. In addition, the device has four counters, two of them ...
  • DS1200,DS1200 Serial RAM Chip
  • The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual 8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a microprocessor is minimized by on-chip circuitry, which ...
  • DS1213B,DS1213B SmartSocket 16k/64k
  • The DS1213B SmartSocket is a 28-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts either 24-pin 2k x 8 (lower-justified) or 28-pin 8k x 8 JEDEC bytewide CMOS static RAM. When the socket is mated ...
  • DS1213C,DS1213C SmartSocket 256k
  • The DS1213C SmartSocket is a 28-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts a 32k x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a complete solution ...
  • DS1213D,DS1213D SmartSocket 256k/1M
  • The DS1213D SmartSocket is a 32-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts 32k x 8 or 128K x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a ...
  • CY7C1011CV33,2-Mbit (128K X 16) Static RAM
  • The CY7C1011CV33 is a high performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. ...
  • CY62137FV30,2-Mbit (128K X 16) Static RAM
  • The CY62137FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This ...
  • CY62137CV,2-Mbit (128K X 16) Static RAM
  • The CY62137CV30/CY62137CV33 and CY62137CV are high-performance CMOS static RAMs organized as 128K words by 16 bits. These devices feature advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in ...
  • CY62147EV18,4-Mbit (256K X 16) Static RAM
  • The CY62147EV18 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This , is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62137FV18,2-Mbit (128K X 16) Static RAM
  • The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This , is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62128EV30,MoBL? 1 Mbit (128K X 8) Static RAM
  • The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This , is ideal for providing More Battery Life, (MoBL ) in ...
  • CY62128E,1-Mbit (128K X 8) Static RAM
  • The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications such ...
  • CY62126EV30,1-Mbit (64K X 16) Static RAM
  • The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in ...
  • CY62158EV30,8-Mbit (1024K X 8) Static RAM
  • The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62138F,2-Mbit (256K X 8) Static RAM
  • The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications such ...
  • CY62146EV30,4-Mbit (256K X 16) Static RAM
  • The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62138FV30,2-Mbit (256K X 8) Static RAM
  • The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62148E,4-Mbit (512K X 8) Static RAM
  • The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications such ...
  • CY7C197BN,256 Kb (256K X 1) Static RAM
  • The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K 1 bits that supports a asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected. ...
  • CY7C199CN,256K (32K X 8) Static RAM
  • The CY7C199CN is a high performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. The device features an automatic power down feature that reduces power consumption when deselected. ...
  • CY7C199D,256K (32K X 8) Static RAM
  • The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE) and tri-state drivers. This device has an automatic power-down ...
  • CY7C1020D,512K (32K X 16) Static RAM
  • The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.The input and output pins (IO through IO ) are placed ...
  • CY7C1019D,1-Mbit (128K X 8) Static RAM
  • The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This device has an automatic power-down ...
  • CY7C1009D,1-Mbit (128K X 8) Static RAM
  • The CY7C109D/CY7C1009D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE ), an active HIGH Chip Enable (CE ), an active LOW 1 2 Output Enable (OE), and tri-state ...
  • CY7C1006D,1-Mbit (256K X 4) Static RAM
  • The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an ...
  • CY7C107D,1-Mbit (1M X 1) Static RAM
  • The CY7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and tri-state drivers. These devices have an automatic power-down feature that ...
  • CY7C1021D,1-Mbit (64K X 16) Static RAM
  • The CY7C1021D is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input/output pins (IO through IO ) are placed in a ...
  • CYDM128B16,1.8V 4K/8K/16K X 16 ? MoBL Dual-Port Static RAM
  • The CYDM256B16, CYDM128B16, CYDM064B16 are low-power CMOS 4K, 8K,16K x 16 dual-port static RAMs. Arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided, permitting ...
  • CY7C1046BN,1M X 4 Static RAM
  • The CY7C1046BN is a high performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. ...
  • CYD36S72V18,FullFlex? Synchronous SDR Dual-Port SRAM
  • The FullFlex, Dual-Port SRAM families consist of 4-Mbit, 9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two ports are provided, allowing the array to be accessed simulta- neously. ...
  • CYD36S36V18,FullFlex? Synchronous SDR Dual-Port SRAM
  • The FullFlex, Dual-Port SRAM families consist of 4-Mbit, 9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two ports are provided, allowing the array to be accessed simulta- neously. ...
  • CYDD36S72V18,FullFlex? Synchronous DDR Dual-Port SRAM
  • The FullFlex, Dual-Port SRAM families consist of 4-Mbit, 9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two ports are provided, allowing the array to be accessed simulta- neously. ...
  • CYDD36S18V18,FullFlex? Synchronous DDR Dual-Port SRAM
  • The FullFlex, Dual-Port SRAM families consist of 4-Mbit, 9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two ports are provided, allowing the array to be accessed simulta- neously. ...
  • CY7C1020DV33,512K (32K X 16) Static RAM
  • The CY7C1020DV33 is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. ...
  • CY7C1019DV33,1-Mbit (128K X 8) Static RAM
  • The CY7C1019DV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic ...
  • CY7C1021DV33,1-Mbit (64K X 16) Static RAM
  • The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. ...
  • CY7C1018DV33,1-Mbit (128K X 8) Static RAM
  • The CY7C1018DV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This device has an automatic ...
  • CY7C10211BN,1-Mbit (64K X 16) Static RAM
  • The CY7C1021BN/CY7C10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The CY7C1021BN/CY7C10211BN is available ...
  • CY6264,8K X 8 Static RAM
  • The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE ), an active 1 HIGH chip enable (CE ), and active LOW output enable (OE) 2 and three-state drivers. ...
  • CY7C185,64-Kbit (8K X 8) Static RAM
  • The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE ), an active HIGH chip enable (CE ), and active LOW output enable (OE) and 2 tri-state drivers. ...
  • CY7C187,64K X 1 Static RAM
  • The CY7C187 is a high-performance CMOS static RAM organized as 65,536 words x 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and tri-state drivers. The CY7C187 has an automatic power-down feature, reducing the power consumption ...
  • CY7C166,16K X 4 Static RAM
  • The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and tri-state drivers. The CY7C166 has an active LOW Output Enable (OE) feature. Both devices ...
  • CY7C192,64K X 4 Static RAM With Separate IO
  • The CY7C192 is a high performance CMOS static RAM organized as 65,536 x 4 bits with separate IO. Easy memory expansion is provided by active LOW Chip Enable (CE) and tri-state drivers. It has an automatic power down feature that reduces power consumption ...
  • CY7C1019CV33,128K X 8 Static RAM
  • The CY7C1019CV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This ...
  • CY7C1018CV33,128K X 8 Static RAM
  • The CY7C1018CV33 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. This ...
  • CY7C128A,2K X 8 Static RAM
  • The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), and active LOW Output Enable (OE) and tri-state drivers. The CY7C128A has an automatic power-down ...
  • CY62157CV30,512K X 16 Static RAM
  • The CY62157CV30/CY62157CV33 are high-performance CMOS static RAMs organized as 512K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life, (MoBL,) in portable ...
  • CY7C1069AV33,2M X 8 Static RAM
  • The CY7C1069AV33 is a high-performance CMOS Static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished by enabling the chip (by taking CE 1 LOW and CE HIGH) and Write Enable (WE) inputs LOW. 2 ...
  • CY7C1297H,1-Mbit (64K X 18) Flow-Through Sync SRAM
  • The CY7C1297H is a 64K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst ...
  • CY7C1218H,1-Mbit (32K X36) Pipelined Sync SRAM
  • The CY7C1218H SRAM integrates 32K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1217H,1-Mbit (32K X 36) Flow-Through Sync SRAM
  • The CY7C1217H is a 32K x 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst ...
  • CY7C1215H,1-Mbit (32K X 32) Pipelined Sync SRAM
  • The CY7C1215H SRAM integrates 32K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1298H,1-Mbit (64K X 18) Pipelined DCD Sync SRAM
  • The CY7C1298H SRAM integrates 64K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1339G,4-Mbit (128K X 32) Pipelined Sync SRAM
  • The CY7C1339G SRAM integrates 128K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1338G,4-Mbit (128K X 32) Flow-Through Sync SRAM
  • The CY7C1338G is a 128K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a ...
  • CY7C1328G,4-Mbit (256K X 18) Pipelined DCD Sync SRAM
  • The CY7C1328G SRAM integrates 256K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1011DV33,2-Mbit (128K X 16)Static RAM
  • The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. The CY7C1011DV33 is available in standard Lead-Free 44-pin TSOP II with center power and ground pinout, as well as 48-ball fine-pitch ball grid array (VFBGA) ...
  • CY7C1041DV33,4-Mbit (256K X 16) Static RAM
  • The CY7C1041DV33 is a high-performance CMOS Static RAM organized as 256K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from I/O pins (I/O I/ ...
  • CY7C1327G,4-Mbit (256K X 18) Pipelined Sync SRAM
  • The CY7C1327G SRAM integrates 256K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1325G,4-Mbit (256K X 18) Flow-Through Sync SRAM
  • The CY7C1325G is a 256 K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a ...
  • CY7C1010DV33,2-Mbit (256K X 8)Static RAM
  • The CY7C1010DV33 is a high-performance CMOS Static RAM organized as 256K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished ...
  • CY7C1046DV33,4-Mbit (1M X 4) Static RAM
  • The CY7C1046DV33 is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by ...
  • CY7C1046D,4-Mbit (1M X 4) Static RAM
  • The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by ...
  • CY7C1223H,2-Mbit (128K X 18) Pipelined DCD Sync SRAM
  • The CY7C1223H SRAM integrates 128K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1344H,2-Mbit (64K X 36) Flow-Through Sync SRAM
  • The CY7C1344H is a 64K x 36 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst ...
  • CY7C1326H,2-Mbit (128K X 18) Pipelined Sync SRAM
  • The CY7C1326H SRAM integrates 128K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1324H,2-Mbit (128K X 18) Flow-Through Sync SRAM
  • The CY7C1324H is a 128K x 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the ...
  • CY7C1346H,2-Mbit (64K X 36) Pipelined Sync SRAM
  • The CY7C1346H SRAM integrates 64K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C1041D,4-Mbit (256K X 16) Static RAM
  • The CY7C1041D is a high-performance CMOS static RAM organized as 256K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O ...
  • CY7C1329H,2-Mbit (64K X 32) Pipelined Sync SRAM
  • The CY7C1329H SRAM integrates 64K x 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). ...
  • CY7C199N,32K X 8 Static RAM
  • The CY7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down ...
  • CY7C1021BNV33,64K X 16 Static RAM
  • The CY7C1021BNV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. ...
  • CY62138VN,256K X 8 Static RAM
  • The CY62138VN is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications such ...