The M65KA512AB is a 512 Mbit Low Power Synchronous DRAM (SDRAM). The memory
array is organized as 4 Banks of 8,388,608 words of 16 bits each.
The LPSDRAM achieves low power consumption and high-speed data transfer using the
pipeline architecture. ...
The M69AR024B is a 16 Mbit (16,777,216 bit)
CMOS memory, organized as 1,048,576 words by
16 bits, and is supplied by a single 1.7V to 2.25V
supply voltage range. ...
The M69AR048B is a 32 Mbit (33,554,432 bit)
CMOS memory, organized as 2,097,152 words by
16 bits, and is supplied by a single 1.65V to 1.95V
supply voltage range.
M69AR048B is a member of STMicroelectronics
1T/1C (one transistor per cell) memory ...
The M69AW024BE is a 16 Mbit (16,777,216 bit)
CMOS memory, organized as 1,024,576 words by
16 bits, and is supplied by a single 2.7V to 3.3V
supply voltage range. ...
The M68AW128M is a 2 Mbit (2,097,152 bit)
CMOS SRAM organized as 131,072 words by 16
bits. The device features fully static operation re-
quiring no external clocks or timing strobes, with
equal address access and cycle times. It requires
a single 2.7 to ...
The M68AF127B is a 1Mbit (1,048,576 bit) CMOS
SRAM organized as 131,072 words by 8 bits. The
device features fully static operation requiring no
external clocks or timing strobes, with equal ad-
dress access and cycle times. It requires a single
4.5 to ...
The M36W0R6030T0 and M36W0R6030B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and an 8-Mbit SRAM Recom-
mended operating conditions do not allow more
than one memory to be active at the ...
The M76DW52003TA and M76DW52003BA are
low voltage Multiple Memory Products that com-
bine two memory devices; a 32 Mbit Dual Bank,
boot block Flash memory (M29DW323D(T/B)) and
a 4Mbit SRAM This document should be read in
conjunction with the M29DW323D ...
The M67025E is a very low power CMOS dual port static RAM organized as 8192 bit
,16. The product is designed to be used as a stand-alone 16-bit dual port RAM or as
a combination MASTER/SLAVE dual port for 32-bit or more width systems. The Atmel
MASTER/SLAVE ...
The AT60142F
AT60142G is a very low power CMOS static RAM organized as 524 288 x
bits.
Atmel brings the solution to applications where fast computing is as mandatory as l
consumption, such as aerospace electronics, portable instruments, or ...
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 A) with a fast access tim
at 30 ns over ...
The DS2423 1-Wire RAM with Counters is a fully static, read/write memory for battery operation in a low-cost, six-lead TSOC, surface-mount package. The memory is organized as 16 pages of 256 bits each. In addition, the device has four counters, two of them ...
The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual 8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a microprocessor is minimized by on-chip circuitry, which ...
The DS1213B SmartSocket is a 28-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts either 24-pin 2k x 8 (lower-justified) or 28-pin 8k x 8 JEDEC bytewide CMOS static RAM. When the socket is mated ...
The DS1213C SmartSocket is a 28-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts a 32k x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a complete solution ...
The DS1213D SmartSocket is a 32-pin, 600mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts 32k x 8 or 128K x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it provides a ...
The CY7C1011CV33 is a high performance CMOS static RAM
organized as 131,072 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected. ...
The CY62137FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This ...
The CY62137CV30/CY62137CV33 and CY62137CV are high-performance
CMOS static RAMs organized as 128K words by 16 bits. These
devices feature advanced circuit design to provide ultra low
active current. This is ideal for providing More Battery Life
(MoBL) in ...
The CY62147EV18 is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
,
is ideal for providing More Battery Life, (MoBL ) in portable
applications ...
The CY62137FV18 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
,
is ideal for providing More Battery Life, (MoBL ) in portable
applications ...
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
,
is ideal for providing More Battery Life, (MoBL ) in ...
The CY62128E is a high performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications such ...
The CY62126EV30 is a high performance CMOS static RAM
organized as 64K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in ...
The CY62158EV30 is a high performance CMOS static RAM
organized as 1024K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications ...
The CY62138F is a high performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications such ...
The CY62146EV30 is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications ...
The CY62138FV30 is a high performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications ...
The CY62148E is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications such ...
The CY7C197BN is a high performance CMOS Asynchronous
SRAM organized as 256K 1 bits that supports a
asynchronous memory interface. The device features an
automatic power down feature that significantly reduces power
consumption when deselected. ...
The CY7C199CN is a high performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic power down feature that reduces power
consumption when deselected. ...
The CY7C199D is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active
LOW Output Enable (OE) and tri-state drivers. This device has
an automatic power-down ...
The CY7C1020D is a high-performance CMOS static RAM
organized as 32,768 words by 16 bits. This device has an
automatic power-down feature that significantly reduces
power consumption when deselected.The input and output
pins (IO through IO ) are placed ...
The CY7C1019D is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down ...
The CY7C109D/CY7C1009D is a high-performance CMOS
static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE ), an active HIGH Chip Enable (CE ), an active LOW
1 2
Output Enable (OE), and tri-state ...
The CY7C106D and CY7C1006D are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and tri-state
drivers. These devices have an ...
The CY7C107D and CY7C1007D are high-performance
CMOS static RAMs organized as 1,048,576 words by 1 bit.
Easy memory expansion is provided by an active LOW Chip
Enable (CE) and tri-state drivers. These devices have an
automatic power-down feature that ...
The CY7C1021D is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power-down feature that significantly reduces
power consumption when deselected. The input/output pins
(IO through IO ) are placed in a ...
The CYDC256B16, CYDC128B16, CYDC064B16,
CYDC128B08, CYDC064B08 are low-power CMOS 4k,
8k,16k x 16, and 8/16k x 8 dual-port static RAMs. Arbitration
schemes are included on the devices to handle situations
when multiple processors access the same piece of ...
The CYDM256B16, CYDM128B16, CYDM064B16 are
low-power CMOS 4K, 8K,16K x 16 dual-port static RAMs.
Arbitration schemes are included on the devices to handle
situations when multiple processors access the same piece of
data. Two ports are provided, permitting ...
The CY7C1046BN is a high performance CMOS static RAM
organized as 1,048,576 words by 4 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. ...
The FullFlex, Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. ...
The FullFlex, Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. ...
The FullFlex, Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. ...
The FullFlex, Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. ...
The CY7C1020DV33 is a high-performance CMOS static
RAM organized as 32,768 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected. ...
The CY7C1019DV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers. This
device has an automatic ...
The CY7C1021DV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected. ...
The CY7C1018DV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic ...
The CY7C1021BN/CY7C10211BN is a high-performance
CMOS static RAM organized as 65,536 words by 16 bits. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
The CY7C1021BN/CY7C10211BN is available ...
The CY6264 is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion
is provided by an active LOW chip enable (CE ), an active
1
HIGH chip enable (CE ), and active LOW output enable (OE)
2
and three-state drivers. ...
The CY7C185 is a high-performance CMOS static RAM
organized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE ), an active HIGH
chip enable (CE ), and active LOW output enable (OE) and
2
tri-state drivers. ...
The CY7C187 is a high-performance CMOS static RAM
organized as 65,536 words x 1 bit. Easy memory expansion is
provided by an active LOW Chip Enable (CE) and tri-state
drivers. The CY7C187 has an automatic power-down feature,
reducing the power consumption ...
The CY7C164 and CY7C166 are high-performance CMOS
static RAMs organized as 16,384 by 4 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
tri-state drivers. The CY7C166 has an active LOW Output
Enable (OE) feature. Both devices ...
The CY7C192 is a high performance CMOS static RAM
organized as 65,536 x 4 bits with separate IO. Easy memory
expansion is provided by active LOW Chip Enable (CE) and
tri-state drivers. It has an automatic power down feature that
reduces power consumption ...
The CY7C1019CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This ...
The CY7C1018CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This ...
The CY7C128A is a high-performance CMOS static RAM
organized as 2048 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), and active
LOW Output Enable (OE) and tri-state drivers. The CY7C128A
has an automatic power-down ...
The CY62157CV30/CY62157CV33 are high-performance CMOS static
RAMs organized as 512K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active
current. This is ideal for providing More Battery Life,
(MoBL,) in portable ...
The CY7C1069AV33 is a high-performance CMOS Static
RAM organized as 2,097,152 words by 8 bits. Writing to the
device is accomplished by enabling the chip (by taking CE
1
LOW and CE HIGH) and Write Enable (WE) inputs LOW.
2 ...
The CY7C1297H is a 64K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst ...
The CY7C1218H SRAM integrates 32K x 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1217H is a 32K x 36 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst ...
The CY7C1215H SRAM integrates 32K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1298H SRAM integrates 64K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1339G SRAM integrates 128K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1338G is a 128K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a ...
The CY7C1328G SRAM integrates 256K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1350G is a 3.3V, 128K x 36 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1350G is equipped with the advanced
No Bus Latency, (NoBL,) ...
The CY7C1011DV33 is a high-performance CMOS Static
RAM organized as 128K words by 16 bits. The CY7C1011DV33 is available in standard Lead-Free
44-pin TSOP II with center power and ground pinout, as well
as 48-ball fine-pitch ball grid array (VFBGA) ...
The CY7C1041DV33 is a high-performance CMOS Static
RAM organized as 256K words by 16 bits. Writing to the device
is accomplished by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then
data from I/O pins (I/O I/ ...
The CY7C1327G SRAM integrates 256K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1325G is a 256 K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a ...
The CY7C1352G is a 3.3V, 256K x 18 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1352G is equipped with the advanced
No Bus Latency, (NoBL,) ...
The CY7C1351G is a 3.3V, 128K x 36 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1351G is equipped with the
advanced No Bus Latency, ...
The CY7C1010DV33 is a high-performance CMOS Static
RAM organized as 256K words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers.
Writing to the device is accomplished ...
The CY7C1046DV33 is a high-performance CMOS static
RAM organized as 1M words by 4 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. Writing
to the device is accomplished by ...
The CY7C1046D is a high-performance CMOS static RAM
organized as 1M words by 4 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE), an active LOW
Output Enable (OE), and tri-state drivers. Writing to the device
is accomplished by ...
The CY7C1231H is a 3.3V/2.5V, 128K x 18 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1231H is equipped with the
advanced No Bus Latency, ...
The CY7C1223H SRAM integrates 128K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1344H is a 64K x 36 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst ...
The CY7C1334H is a 3.3V/2.5V, 64K x 32
synchronous-pipelined Burst SRAM designed specifically to
support unlimited true back-to-back Read/Write operations
without the insertion of wait states. The CY7C1334H is
equipped with the advanced No Bus Latency, ...
The CY7C1326H SRAM integrates 128K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C1324H is a 128K x 18 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the ...
The CY7C1346H SRAM integrates 64K x 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The FLEx18, family includes 512-Kbit, 1-Mbit, 2-Mbit, 4-Mbit
and 9-Mbit pipelined, synchronous, true dual-port static RAMs
that are high-speed, low-power 3.3V CMOS. Two ports are
provided, permitting independent, simultaneous access to any
location in ...
The FLEx72 family includes 4-Mbit, 9-Mbit and 18-Mbit
pipelined, synchronous, true dual-port static RAMs that are
high-speed, low-power 3.3V CMOS. Two ports are provided,
permitting independent, simultaneous access to any location
in memory. The result of ...
The CY7C1305BV25/CY7C1307BV25 are 2.5V Synchronous
Pipelined SRAMs equipped with QDR architecture. QDR
architecture consists of two separate ports to access the
memory array. The Read port has dedicated Data Outputs to
support Read operations and the ...
The CY7C1041D is a high-performance CMOS static RAM
organized as 256K words by 16 bits. Writing to the device is
accomplished by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O ...
The CY7C1329H SRAM integrates 64K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). ...
The CY7C199N is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. This device
has an automatic power-down ...
The CY7C1021BNV is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power-down feature that significantly reduces
power consumption when deselected. ...
The CY62138VN is a high-performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
,
This is ideal for providing More Battery Life, (MoBL ) in
portable applications such ...
