• Product pinout
  • Description
  • CY62146E,4-Mbit (256K X 16) Static RAM
  • The CY62146E is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is , ideal for providing More Battery Life, (MoBL ) in portable appli- cations such ...
  • CY62146ESL,4-Mbit (256K X 16) Static RAM
  • The CY62146ESL is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This , is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CY62148EV30,4-Mbit (512K X 8) Static RAM
  • The CY62148EV30 is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. , This is ideal for providing More Battery Life, (MoBL ) in portable applications ...
  • CYK256K16SCCB,4-Mbit (256K X 16) Pseudo Static RAM
  • The CYK256K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for ...
  • CYK256K16MCCB,4-Mbit (256K X 16) Pseudo Static RAM
  • The CYK256K16MCCB is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. , This is ideal for ...
  • CY62136CV30,2-Mbit (128K X 16) Static RAM
  • The CY62136CV30 is high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. ...
  • CY7C1049D,4-Mbit (512K X 8) Static RAM
  • The CY7C1049D is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by ...
  • CY62147DV18,4-Mb (256K X 16) Static RAM
  • The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features ad- vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life, (MoBL,) in portable applications ...
  • K6R4016V1D,256K X 16 Bit High-Speed CMOS Static RAM
  • The K6R4016V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. ...
  • K6R4016C1D,256K X 16 Bit High-Speed CMOS Static RAM
  • The K6R4016C1D is a 4,194,304-bit high-speed Static Ran- dom Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read ...
  • K6R4008V1D,512K X 8 Bit High-Speed CMOS Static RAM
  • The K6R4008V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. ...
  • K6R4008C1D,512K X 8 Bit High-Speed CMOS Static RAM
  • The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. ...
  • K6R4004C1D,1M X 4 Bit High-Speed CMOS Static RAM
  • The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. ...
  • IS61C5128AL,512K X 8 HIGH-SPEED CMOS STATIC RAM
  • The ISSI IS61C5128AL/IS61C5128AS and IS64C5128AL/IS64C5128AS are high- speed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits. They are fabricated using ISSI\'s high- performance CMOS technology. This highly reliable process coupled with ...
  • IS61C25616AL,256K X 16 HIGH-SPEED CMOS STATIC RAM
  • The ISSI IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI\'s high- performance CMOS technology. This highly reliable process coupled ...
  • IS62C256AL,32K X 8 LOW POWER CMOS STATIC RAM
  • The ISSI IS62C256AL/IS65C256AL is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI\'s high-performance, low power CMOS tech- nology. When CE is HIGH (deselected), the device assumes a standby mode at which the power ...
  • T15V4M16B,T15V4M16B
  • The T15V4M16B is a very Low Power CMOS Static RAM organized as 262,144 words by 16 bits. That operates on a wide voltage range from 2.7V to 3.6V power supply, Fabricated using high performance CMOS technology, Inputs and three-state outputs are TTL ...
  • LP62S16256F,256K X 16 BIT LOW VOLTAGE CMOS SRAM
  • The LP62S16256F-T is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMIC\'s high performance CMOS process. Inputs and ...
  • LP62S16256G,256K X 16 BIT LOW VOLTAGE CMOS SRAM
  • The LP62S16256G is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMIC\'s high performance CMOS process. Inputs and ...
  • LP62E16256E,256K X 16 BIT LOW VOLTAGE CMOS SRAM
  • The LP62E16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 1.65V to 2.2V. It is built using AMIC\'s high performance CMOS process. Inputs and ...
  • LP62S4096E,512K X 8 BIT LOW VOLTAGE CMOS SRAM
  • The LP62S4096E-T is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMIC\'s high performance CMOS process. Inputs and ...
  • MCM6946,512k X 9 Bit Fast Static Random Access Memory , Inc
  • The MCM6946 is a 4,194,304bit static random access memory organized as 524,288 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. The MCM6946 is equipped with chip enable (E) and output enable (G) pins, allowing for ...
  • MCM69L737A,4m Late Write Lvttl , Inc
  • The MCM69L737A MCM69L819A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69L819A organized as 256K words by 18 bits, ...
  • MCM69R737A,4m Late Write Lvttl ,
  • The MCM69R737A MCM69R819A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69R819A organized as 256K words by 18 bits, ...
  • K7N401801A,128kx36 & 256kx18-bit Pipelined Ntramtm
  • The K7N403601A and K7N401801A are 4,718,592 bits Syn- chronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • K7N401801M,128kx36 & 256kx18 Pipelined Ntram-tm Semiconductor
  • The K7N403601M and K7N401801M are 4,718,592 bits Syn- chronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory uti- lizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except ...
  • R1LV0416D,4M SRAM (256-kword ?? 16-bit)
  • The R1LV0416D is a 4-Mbit static RAM organized 256-kword 16-bit, fabricated by Renesas\'s high-performance 0.15m CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series ...
  • HY62V8400A,512K X8 Bit 3.3V Low Power CMOS Slow SRAM
  • The HY62V8400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY62V8400A uses Hynix\'s high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is ...