16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory 16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory

The SST34HF1641J and SST34HF1681J ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS Flash memory bank with either a 256K x16, or 512K x16 CMOS pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST proprietary, high-performance CMOS SuperFlash technol- ogy incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufactur- ability compared with alternate approaches. The SST34HF1641J 1681J devices are ideal for applications such as cellular phones, GPs devices, PDAs, and other portable electronic devices in a low power and small form factor system. By Silicon Storage Technology, Inc.
SST34HF1641J 's PackagesSST34HF1641J 's pdf datasheet
SST34HF1681J
SST34HF1641J-70-4E-L1PE
SST34HF1641J-70-4E-LSE
SST34HF1681J-70-4E-L1PE
SST34HF1681J-70-4E-LSE




SST34HF1641J Pinout, Pinouts
SST34HF1641J pinout,Pin out
This is one package pinout of SST34HF1641J,If you need more pinouts please download SST34HF1641J's pdf datasheet.

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SST34HF1641J Application Notes SST34HF1641J RoHS SST34HF1641J Circuits SST34HF1641J footprint
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