P Channel Enhancement Mode MOSFET

The ST2301DSRG is the P-Channel Logic enhancement mode power field effect Transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer Power Management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. By Stanson Technology Co., Ltd.
ST2301DSRG 's PackagesST2301DSRG 's pdf datasheet

ST2301DSRG Pinout, Pinouts
ST2301DSRG pinout,Pin out
This is one package pinout of ST2301DSRG,If you need more pinouts please download ST2301DSRG's pdf datasheet.

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