N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET

Using the latest high voltage MESH OVERLAY process, STE38NB50F STMicroelectronics has designed an ad- vanced family of Power MOSFETs with outstand- ing performances. The new patent pending strip layout coupled with the Companys proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled Gate charge and switching characteristics By STMicroelectronics
STE38NB50F 's PackagesSTE38NB50F 's pdf datasheet



STE38NB50F Pinout, Pinouts
STE38NB50F pinout,Pin out
This is one package pinout of STE38NB50F,If you need more pinouts please download STE38NB50F's pdf datasheet.

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