N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFETUsing the latest high voltage MESH OVERLAY
process, STE38NB50F STMicroelectronics has designed an ad-
vanced family of Power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Companys proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled Gate charge and
switching characteristics By STMicroelectronics
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| STE38NB50F Pb-Free | STE38NB50F Cross Reference | STE38NB50F Schematic | STE38NB50F Distributor |
| STE38NB50F Application Notes | STE38NB50F RoHS | STE38NB50F Circuits | STE38NB50F footprint |
