Emitter Switched Bipolar Transistor Esbt 900 V - 12a - 0.083 Ohm The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. By STMicroelectronics

STP12IE90F4 's Packages STP12IE90F4 's pdf datasheet Add Datasheet to Frame-It STP12IE90F4 pdf datasheet download

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