Emitter Switched Bipolar Transistor Esbt 900 V - 12a - 0.083 Ohm

The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. By STMicroelectronics
STP12IE90F4 's PackagesSTP12IE90F4 's pdf datasheet



STP12IE90F4 Pinout, Pinouts
STP12IE90F4 pinout,Pin out
This is one package pinout of STP12IE90F4,If you need more pinouts please download STP12IE90F4's pdf datasheet.

STP12IE90F4 Application circuits
STP12IE90F4 circuits
This is one application circuit of STP12IE90F4,If you need more circuits,please download STP12IE90F4's pdf datasheet.


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