Emitter Switched Bipolar Transistor Esbt 950 V - 12a - 0.083 Ohm

The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. By STMicroelectronics
STP12IE95F4 's PackagesSTP12IE95F4 's pdf datasheet

STP12IE95F4 Pinout, Pinouts
STP12IE95F4 pinout,Pin out
This is one package pinout of STP12IE95F4,If you need more pinouts please download STP12IE95F4's pdf datasheet.

STP12IE95F4 Application circuits
STP12IE95F4 circuits
This is one application circuit of STP12IE95F4,If you need more circuits,please download STP12IE95F4's pdf datasheet.

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