N - Channel Enhancement Mode Powermesh MosfetN - Channel Enhancement Mode Powermesh MOSFET STP6NB50 STP6NB50FP ,Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Companys
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled Gate charge
and switching characteristics. By STMicroelectronics
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