N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFETDESCRIPTION
Using the latest high voltage MESH OVERLAY STY34NB50F
process, STMicroelectronics has designed an ad-
vanced family of Power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Companys proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled Gate charge and
switching characteristics. By STMicroelectronics
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STY34NB50F Pb-Free | STY34NB50F Cross Reference | STY34NB50F Schematic | STY34NB50F Distributor |
STY34NB50F Application Notes | STY34NB50F RoHS | STY34NB50F Circuits | STY34NB50F footprint |