• Product pinout
  • Description
  • MBR0520L,0.5A 20V Schottky Rectifier
  • The Schottky Power Rectifier MBR0520L employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and ...
  • MBR0530,0.5A 30V Schottky Rectifier
  • The MBR0530T1,MBR0530T3 uses the Schottky Barrier MBR0530 principle with a lar area metal?to?silicon power diode. Ideally suited for low voltag high frequency rectification or as free wheeling and polari protection diodes in surface mount applications ...
  • MBR0540,0.5A 40V Schottky Rectifier
  • The Schottky Power Rectifier MBR0540 employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and ...
  • MBRS130L,1A 30V Schottky Rectifier
  • ...Employs the Schottky MBRS130L Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage high frequency ...
  • MBRS130,1A 30V Schottky Rectifier
  • . . . employing the Schottky Barrier MBRS130 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS140,1A 40V Schottky Rectifier
  • . . . employing the Schottky Barrier MBRS140 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS340,3A 40V Schottky Rectifier
  • ...employing the Schottky Barrier MBRS340 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • 1N5817,1A 20V Schottky Rectifier
  • This series employs the Schottky Barrier 1N5817 principle in a large area metal?to?silicon power diode. State?of?the?art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use ...
  • 1N5820,3A 20V Schottky Rectifier
  • ...employing the Schottky Barrier 1N5820 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as ...
  • MBR1100,1A 100V Schottky Rectifier
  • . . . employing the Schottky Barrier MBR1100 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in ...
  • MBRB20200CT,20A 200V Schottky Rectifier, Power Rectifier
  • ...using Schottky Barrier MBRB20200CT technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer ...
  • MBRB2060CT,20A 60V Schottky Rectifier
  • Employs the use of the Schottky Barrier MBRB2060CT principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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  • MBRB2515L,25A 15V Schottky Rectifier
  • D2PAK Power Rectifier MBRB2515L employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, ...
  • MBRB1045,10A 45V Schottky Rectifier, Schottky Power Rectifier
  • This series of Power Rectifiers MBRB1045 employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in ...
  • MBRD320,3A 20V Schottky Rectifier, Power Rectifiers
  • ...designed for use as output rectifiers, MBRD320 free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state-of-the-art devices have the following features: Power Rectifiers
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  • MBRF2060CT,20A 60V Schottky Rectifier, Schottky Power Rectifier
  • The SWITCHMODE Power Rectifier MBRF2060CT employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use ...
  • MBRF2545CT,25A 45V Schottky Rectifier, Schottky Power Rectifier
  • The SWITCHMODE Power Rectifier MBRF2545CT employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use ...
  • MBRS1100,1A 100V Schottky Rectifier
  • Schottky Power Rectifiers MBRS1100 employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for ...
  • MBRS120,1A 20V Schottky Rectifier
  • . . . employing the Schottky Barrier MBRS120 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS260T3,Surface Mount Schottky Power Rectifier
  • SMB Power Surface Mount Package employing the Schottky Barrier MBRS260T3 principle in a metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS3100T3,Surface Mount Schottky Power Rectifier
  • ...employing the Schottky Barrier MBRS3100T3 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS3200,3A 200V Schottky Rectifier
  • . . . employing the Schottky Barrier MBRS3200 principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBRS410ET3,Surface Mount Schottky Power Rectifier
  • ...employing the Schottky Barrier MBRS410ET3 principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency ...
  • MBR150,1A 50V Schottky Rectifier
  • ...employing the Schottky Barrier MBR150 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, ...
  • MBR20100CT,20A 100V Schottky Rectifier
  • This series uses the Schottky Barrier MBR20100CT principle with a platinum barrier metal. These state-of-the-art devices have the following features: Power Rectifiers
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  • MBR2515L,25A 15V Schottky Rectifier
  • ...employing the Schottky Barrier MBR2515L principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency ...
  • MBR3045WT,30A 45V Schottky Rectifer
  • . . . using the Schottky Barrier MBR3045WT principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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  • MBR3100,3A 100V Schottky Rectifier
  • . . . employing the Schottky Barrier MBR3100 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passiva-tion and metal overlap contact. Ideally suited for use as rectifiers in ...
  • MBR340,3A 40V Schottky Rectifier
  • . . . employing the Schottky Barrier MBR340 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in ...
  • MBR350,3A 50V Schottky Rectifier
  • . . . employing the Schottky Barrier MBR350 principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in ...
  • MBR4045PT,40A 45V Schottky Rectifier
  • The SWITCHMODE power rectifier MBR4045PT employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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  • MBR4045WT,40A 45V Schottky Rectifier
  • The SWITCHMODE power rectifier MBR4045WT employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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  • MBR6045PT,60A 45V Schottky Rectifier
  • The SWITCHMODE power rectifier MBR6045PT employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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  • MBR6045WT,60A 45V Schottky Rectifier
  • The SWITCHMODE power rectifier MBR6045WT employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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  • MBRA210LT3,Surface Mount Schottky Power Rectifier
  • MBRA210LT3 employing the Schottky Barrier principle in a metal  to  silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free ...
  • MBRB1545CT,15A 45V Schottky Rectifier
  • The D2PAK Power Rectifier MBRB1545CT employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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  • MBRB20100CT,20A 100V Schottky Rectifier
  • D2PAK Power Rectifier MBRB20100CT employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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