1M X 16 SDRAM

The T431616D E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous Interface (all signals are registered on the positive edge of the Clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. By TM Technology Inc.
T431616D 's PackagesT431616D 's pdf datasheet
T431616D-5S
T431616D-5SG
T431616D-6S
T431616D-6SG
T431616D-7S
T431616D-7SG
T431616E-7S
T431616E-7SG




T431616D Pinout, Pinouts
T431616D pinout,Pin out
This is one package pinout of T431616D,If you need more pinouts please download T431616D's pdf datasheet.

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T431616D Application Notes T431616D RoHS T431616D Circuits T431616D footprint
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