4M X 16 SDRAM

The T436416D SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous Interface (all signals are registered on the positive edge of the Clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. By TM Technology Inc.
T436416D 's PackagesT436416D 's pdf datasheet



T436416D Pinout, Pinouts
T436416D pinout,Pin out
This is one package pinout of T436416D,If you need more pinouts please download T436416D's pdf datasheet.

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