New High Power, High Efficiency Hbt Gsm Power Amplifier - Rf Micro Devices

RF Micro Devices introduces a new power Amplifier TA0012 for GSM applications based on revolutionary HBT (Het- erojunction Bipolar Transistor) technology. This power Amplifier operates from a single 4.8V or 6V power sup- ply without the need for a negative voltage. The power output at 4.8V is 35dBm, and at 6V the PA provides 36dBm! The overall efficiency is as high as 62 percent. On-board power control is included, as is power down. The part is packaged in an industry standard 16-lead SOIC with 4 fused, wide leads. By RF Micro Devices
TA0012 's PackagesTA0012 's pdf datasheet



TA0012 Pinout, Pinouts
TA0012 pinout,Pin out
This is one package pinout of TA0012,If you need more pinouts please download TA0012's pdf datasheet.

TA0012 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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