Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos - Toshiba Semiconductor

The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes  32 pages  4096 blocks. The device has a 528-byte static Register which allows program and read data to be transferred between the Register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes  32 pages). The TC58512 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. By Toshiba Semiconductor
TC58512FT 's PackagesTC58512FT 's pdf datasheet

TC58512FT Pinout, Pinouts
TC58512FT pinout,Pin out
This is one package pinout of TC58512FT,If you need more pinouts please download TC58512FT's pdf datasheet.

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