512-MBIT (64M U 8 BITS) CMOS NAND E2 PROM

The device TC58DVM92A1FT00 is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static Register which allows program and read data to be transferred between the Register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes u 32 pages). The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. By Toshiba Semiconductor
TC58DVM92A1FT00 's PackagesTC58DVM92A1FT00 's pdf datasheet



TC58DVM92A1FT00 Pinout, Pinouts
TC58DVM92A1FT00 pinout,Pin out
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