The device TC58DVM92A1FTI0 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static Register which allows program and read data to be transferred between the Register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes u 32 pages). The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. By Toshiba Semiconductor
TC58DVM92A1FTI0 's PackagesTC58DVM92A1FTI0 's pdf datasheet

TC58DVM92A1FTI0 Pinout, Pinouts
TC58DVM92A1FTI0 pinout,Pin out
This is one package pinout of TC58DVM92A1FTI0,If you need more pinouts please download TC58DVM92A1FTI0's pdf datasheet.

TC58DVM92A1FTI0 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

TC58DVM92A1FTI0 Pb-Free TC58DVM92A1FTI0 Cross Reference TC58DVM92A1FTI0 Schematic TC58DVM92A1FTI0 Distributor
TC58DVM92A1FTI0 Application Notes TC58DVM92A1FTI0 RoHS TC58DVM92A1FTI0 Circuits TC58DVM92A1FTI0 footprint
Hot categories