1 Gbit (128m × 8 Bits) Cmos Nand Eeprom - Toshiba Semiconductor

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes 64 pages 1024 blocks. The device has a 2112-byte static Registers which allow program and read data to be transferred between the Register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. By Toshiba Semiconductor
TC58NVG0S3AFT05 's PackagesTC58NVG0S3AFT05 's pdf datasheet



TC58NVG0S3AFT05 Pinout, Pinouts
TC58NVG0S3AFT05 pinout,Pin out
This is one package pinout of TC58NVG0S3AFT05,If you need more pinouts please download TC58NVG0S3AFT05's pdf datasheet.

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