2 GBIT (256M U 8 BIT/128M U 16 BIT) CMOS NAND E2 PROM

The TC58NVG1S3BFT00 TC58NVG1S8BFT00 is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words 64 pages 2048 blocks. The device has a 2112-byte/1056-word static Register which allow program and read data to be transferred between the Register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58NVG1S3BFT00 TC58NVG1S8BFT00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. By Toshiba Semiconductor
TC58NVG1S3BFT00 's PackagesTC58NVG1S3BFT00 's pdf datasheet
TC58NVG1S8BFT00




TC58NVG1S3BFT00 Pinout, Pinouts
TC58NVG1S3BFT00 pinout,Pin out
This is one package pinout of TC58NVG1S3BFT00,If you need more pinouts please download TC58NVG1S3BFT00's pdf datasheet.

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