Mos Digital Integrated Circuit Silicon Monolithic - Toshiba Semiconductor

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words 8 banks 16 bits, TC59LM906AMG is organized as 8,388,608-words 8 banks 8 bits. TC59LM914/06AMG feature a fully synchronous operation referenced to Clock edge whereby all operations are synchronized at a Clock input which enables high performance and simple user Interface coexistence. TC59LM914/06AMG CAN operate fast core cycle compared with regular DDR SDRAM TC59LM914/06AMG is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition. By Toshiba Semiconductor
TC59LM906AMG 's PackagesTC59LM906AMG 's pdf datasheet

TC59LM906AMG Pinout, Pinouts
TC59LM906AMG pinout,Pin out
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