100 Watt Discrete Power GaN On SiC HEMT

The TriQuint TGF2023-20 is a Discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-20 is designed using TriQuint proven 0.25um GaN production process. This process features advanced field plate techniques to optimize Microwave power and efficiency at high drain bias operating conditions. The TGF2023-20 typically provides > 50 dBm of saturated output power with power gain of 15 dB. The maximum power added efficiency is 55% which makes the TGF2023-20 appropriate for high efficiency applications. Lead-free and RoHS compliant By TriQuint Semiconductor
TGF2023-20 's PackagesTGF2023-20 's pdf datasheet



TGF2023-20 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
TGF2023-20 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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TGF2023-20 Application Notes TGF2023-20 RoHS TGF2023-20 Circuits TGF2023-20 footprint