Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos - Toshiba Semiconductor

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static Registers which allow program and read data to be transferred between the Register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages). The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non- volatile memory data storage. By Toshiba Semiconductor
TH58NVG1S3AFT05 's PackagesTH58NVG1S3AFT05 's pdf datasheet

TH58NVG1S3AFT05 Pinout, Pinouts
TH58NVG1S3AFT05 pinout,Pin out
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