The TOSHIBA TLP209D consist of a gallium arsenide infrared emitting Diode optically coupled to a photo-MOS FET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments. By Toshiba Semiconductor
TLP209D 's PackagesTLP209D 's pdf datasheet

TLP209D Pinout, Pinouts
TLP209D pinout,Pin out
This is one package pinout of TLP209D,If you need more pinouts please download TLP209D's pdf datasheet.

TLP209D Application circuits
TLP209D circuits
This is one application circuit of TLP209D,If you need more circuits,please download TLP209D's pdf datasheet.

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TLP209D Application Notes TLP209D RoHS TLP209D Circuits TLP209D footprint
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