Toshiba Field Effect Transistor Silicon N Channel Mos Type (high Speed U-mosiii) - Toshiba Semiconductor

Toshiba Field Effect Transistor Silicon N Channel Mos Type (high Speed U-mosiii) TPC8009-H - Toshiba Semiconductor,Small footprint due to small and thin package High speed switching Small Gate charge: Qg = 29 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8 m (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) By Toshiba Semiconductor
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TPC8009-H 's PackagesTPC8009-H 's pdf datasheet



TPC8009-H Pinout, Pinouts
TPC8009-H pinout,Pin out
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