DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS process, for 3-V or 5-V Power Distribution in battery-powered systems. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 A, the TPS1120 is the ideal high-side Switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other P-Channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from 40C to 150C. By Texas Instruments
TPS1120Y 's PackagesTPS1120Y 's pdf datasheet



TPS1120Y Pinout, Pinouts
TPS1120Y pinout,Pin out
This is one package pinout of TPS1120Y,If you need more pinouts please download TPS1120Y's pdf datasheet.

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