600V N-Channel Power MOSFET

The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. By Taiwan Semiconductor Company, Ltd. (TSC)
TSM1N60S 's PackagesTSM1N60S 's pdf datasheet

TSM1N60S Pinout, Pinouts
TSM1N60S pinout,Pin out
This is one package pinout of TSM1N60S,If you need more pinouts please download TSM1N60S's pdf datasheet.

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