NPN SILICON TRANSISTOR

The TUL1102 is manufactured which is using high voltage Multi Epitaxial Planar technology for high voltage capability and high switching speeds. For enhancing switching speeds while maintaining a wide RBSOA, the TUL1102 uses a Cellular Emitter structure with planar edge termination. Because of an increased intermediate layer which has an intrinsic ruggedness, and it enables the Transistor to withstand a high collector current level during Breakdown condition, without using the transil protection. By LianShun Electronics Co., Ltd
TUL1102 's PackagesTUL1102 's pdf datasheet
TUL1102-TA3-T
TUL1102L-TA3-T
TUL1102G-TA3-T




TUL1102 Pinout, Pinouts
TUL1102 pinout,Pin out
This is one package pinout of TUL1102,If you need more pinouts please download TUL1102's pdf datasheet.

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