Transistors datasheet,Transistors Pinout,Transistors application circuits

Transistors

Product pinout
Description

2N6027,Programmable Unijunction Transistor
Designed to enable the engineer 2N6027 to program unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in ...

BLA1011-10,BLA1011-10 Avionics LDMOS Transistor
BLA1011-10 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
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BLA1011-2,BLA1011-2 Avionics LDMOS Transistor
BLA1011-2 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.
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BLF1043,BLF1043 UHF Power LDMOS Transistor
BLF1043 UHF power LDMOS transistor,10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.
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BLF1046,BLF1046 UHF Power LDMOS Transistor
BLF1046 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
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BLF175,BLF175 HF-VHF Power MOS Transistor
BLF175 HF-VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All ...

BLF1820-90,BLF1820-90 UHF Power LDMOS Transistor
BLF1820-90 UHF power LDMOS transistor,90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.
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BLF1822-10,BLF1822-10 UHF Power LDMOS Transistor
BLF1822-10 UHF power LDMOS transistor,10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
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BLF2043F,BLF2043F UHF Power LDMOS Transistor
BLF2043F UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
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BLF2043,BLF2043 UHF Power LDMOS Transistor
BLF2043 UHF power LDMOS transistor,10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
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BLF2045,BLF2045 UHF Power LDMOS Transistor
BLF2045 UHF power LDMOS transistor,30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz.
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BLF242,BLF242 HF-VHF Power MOS Transistor
BLF242 HF-VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ...

BLF245,BLF245 VHF Power MOS Transistor
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from ...

BLF246B,BLF246B VHF Push-pull Power MOS Transistor
BLF246B VHF push-pull power MOS transistor,Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.
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BLF246,BLF246 VHF Power MOS Transistor
BLF246 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) ...

BLF248,BLF248 VHF Push-pull Power MOS Transistor
BLF248 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 ...

BLF278,BLF278 VHF Push-pull Power MOS Transistor
BLF278 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common ...

BLF346,BLF346 VHF Power MOS Transistor
BLF346 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) ...

BLF368,BLF368 VHF Push-pull Power MOS Transistor
BLF368 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 ...

CMPP6027,SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR
The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors manufactured in a surface mount SOT- 23 package, designed for adjustable (programmable) characteristics such as, Valley Current (I ), Peak V Current (I ...

SFT2907A,Sft2907a 60 Volts Pnp High Speed Low Power Transistor - Solid States Devices, Inc
Sft2907a 60 Volts Pnp High Speed Low Power Transistor - Solid States Devices, Inc SFT2907A ...

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