Designed to enable the engineer 2N6027 to program unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in ...
BLA1011-10 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
...
BLA1011-2 Avionics LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
...
BLF1046 UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
...
BLF175 HF-VHF power MOS transistor,Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123A
flange package, with a ceramic cap.
All ...
BLF2043F UHF power LDMOS transistor,Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
...
BLF242 HF-VHF power MOS transistor,Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123A flange package,
with a ...
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from ...
BLF246B VHF push-pull power MOS transistor,Dual silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in an 8-lead
SOT161A balanced flange package
with a ceramic cap. All leads are
isolated from the flange.
...
BLF246 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(VGS) ...
BLF248 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262 A1 ...
BLF278 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common ...
BLF346 VHF power MOS transistor,Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119A flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) ...
BLF368 VHF push-pull power MOS transistor,Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 ...
The Central Semiconductor CMPP6027, CMPP6028
types are Silicon Programmable Unijunction
Transistors manufactured in a surface mount SOT-
23 package, designed for adjustable (programmable)
characteristics such as, Valley Current (I ), Peak
V
Current (I ...