32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE

The UPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The UPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cache and Buffer memory. The UPD44323362 is packaged in a 119-pin PLASTIC BGA (Ball Grid Array). By NEC Electronics Inc.
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