• Product pinout
  • Description
  • RHRD660S,6A, 600V HyperFast Diode
  • The RHRD660 and RHRD660S are hyperfast dual diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
    These devices are ...
  • RHRP8120,8A, 1200V HyperFast Diode
  • The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr<55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RHRP1560,15A, 600V HyperFast Diode
  • The RHRP1540 and RHRP1560 are hyperfast diode with soft recovery characteristics (trr<35ns). It has half the recovery time of ultrafast diodes RHRP1560 and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is ...
  • RHRG30120,30A, 1200V HyperFast Diode
  • The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as ...
  • RHRP3060,30A, 600V HyperFast Diode
  • The RHRP3060 are hyperfast diode with soft recovery characteristics (trr<40ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RHRP15120,15A, 1200V HyperFast Diode
  • The RHRP15120 is a hyperfast diode with soft recovery characteristics (trr<65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RURG8060,80A, 600V UltraFast Diode
  • The RURG8060 is an ultrafast diode with soft recovery characteristics (trr<75ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RHRP30120,30A, 1200V HyperFast Diode
  • The RHRP30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns).It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as ...
  • RHRG1560CC,15A, 600V HyperFast Dual Diode
  • The RHRG1540CC and RHRG1560CC are hyperfast dual diodes with soft recovery characteristics (trr < 35ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
    These devices ...
  • RURG3060,30A, 600V UltraFast Diode
  • The RURG3060 is an ultrafast diode with soft recovery characteristics (trr<55ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RHRG3060,30A, 600V HyperFast Diode
  • The RHRG3040 and RHRG3060 are hyperfast dual diodes with soft recovery characteristics (trr < 40ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
    These devices are ...
  • RURP3060,30A, 600V UltraFast Diode
  • The RURP3060 is an ultrafast diode (trr<55ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
    This device is intended for use as an energy ...
  • RURG3020CC,30A, 200V UltraFast Dual Diode
  • The RURG3020CC is an ultrafast dual diode with soft recovery characteristics (trr<45ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RURD460S,4A, 600V UltraFast Diode
  • The RURD460, and RURD460S are ultrafast diodes with soft recovery characteristics (trr<55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
    These devices are intended for use as ...
  • RHRG75120,75A, 1200V HyperFast Diode
  • The RHRG75120 is a hyperfast diode with soft recovery characteristics (trr<85ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RURP860,8A, 600V UltraFast Diodes
  • The MUR840, MUR860, RURP840 and RURP860 are low forward voltage drop ultrafast recovery rectifiers (trr<60ns). They use a glass-passivated ion-implanted, epitaxial construction.
    These devices are intended for use as output rectifiers and flywheel ...
  • RHRG5060,50A, 600V HyperFast Diode
  • The RHRG5060 is a hyperfast diode with soft recovery characteristics (trr<45ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RURG3060CC,30A, 600V UltraFast Dual Diode
  • RURG3040CC and RURG3060CC are ultrafast dual diodes with soft recovery characteristics (trr<55ns). They have low forward voltage drop and are silicon nitride passivated ionimplanted epitaxial planar construction.
    These devices are intended for use ...
  • RURP8100,8A, 1000V UltraFast Diode
  • The MUR8100E and RUR8100 are ultrafast diodes (trr<75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
    These devices are intended for use ...
  • RURP1560,15A, 600V UltraFast Diode
  • The RURP1560 is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
    This device is intended for use as an ...
  • RURD4120S,4A, 1200V UltraFast Diode
  • The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics (trr<70ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
    These devices are intended for use as ...
  • RURG5060,75A, 600V UltraFast Diode
  • The RURG5060 is an ultrafast diode with soft recovery characteristics (trr<65ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • MMBD4448,High Conductance Fast Diode
  • The high breakdown voltage, fast switching speed and high forward conductance of this diode MMBD4448 packaged in a SOT-23 Surface Mount package makes it desirable also as a general purpose diode.
    ...
  • RHRG3060CC,30A, 600V HyperFast Dual Diode
  • The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics (trr<40ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are ...
  • RURD660,6A, 600V UltraFast Diode
  • The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics (trr<55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
    These devices are intended for use as ...
  • RURG1520CC,15A, 200V UltraFast Dual Diode
  • The RURG1520CC is an ultrafast dual diode with soft recovery characteristics (trr<30ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RUR1S1560S9A,15A, 600V Ultrafast Diode
  • The RUR1S1560S is an ultrafast diode (trr < 55ns) with soft recovery characteristics. It has low forward voltage drop and is of silicon nitride passivated ion-implanted, epitaxial planar construction.
    This device is intended for use as ...
  • RURG80100,80A, 1000V UltraFast Diode
  • The RURG80100 is an ultrafast diode with soft recovery characteristics (trr<125ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
    This device is intended for use as a ...
  • RURD660S,6A, 600V UltraFast Diode
  • The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics (trr<55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
    These devices are intended for use as ...
  • RURD620CCS9A,6A, 200V Ultrafast Dual Diode
  • The RURD620CC and RURD620CCS are ultrafast dual diodes with soft recovery characteristics (trr<25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use ...
  • 1N4150,1N4150; 1N4151 High-speed Diodes
  • The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
    ...
  • 1N4531,1N4531; 1N4532 High-speed Diodes
  • The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages.
    ...
  • 1PS181,1PS181 High-speed Double Diode
  • The 1PS181 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package.
    ...
  • 1PS184,1PS184 High-speed Double Diode
  • The 1PS184 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package.
    ...
  • 1PS193,1PS193 High-speed Diode
  • The 1PS193 is a high-speed switching diode, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package.
    ...
  • 1PS226,1PS226 High-speed Double Diode
  • The 1PS226 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small plastic SMD SC59 package.
    ...
  • 1PS300,1PS300 High-speed Double Diode
  • The 1PS300 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small rectangular SOT323 (SC-70) plastic SMD package.
    ...
  • 1PS301,1PS301 High-speed Double Diode
  • The 1PS301 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package.
    ...
  • 1PS302,1PS302 High-speed Double Diode
  • The 1PS302 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package.
    ...
  • BYM359DX,BYM359DX Dual Diode Fast, High-voltage
  • BYM359DX Dual diode fast, high-voltage,Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM359DX contains diodes with performance characteristics designed specifically for ...
  • PMBD6050,PMBD6050 High-speed Diode
  • PMBD6050 High-speed diode,The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package.
    ...
  • PMBD6100,PMBD6100 High-speed Double Diode
  • PMBD6100 High-speed double diode,The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
    ...
  • PMBD7000,PMBD7000 High-speed Double Diode
  • PMBD7000 High-speed double diode,The PMBD7000 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
    ...
  • PMBD7100,PMBD7100 High-speed Double Diode
  • PMBD7100 High-speed double diode,The PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 SMD plastic package.
    ...
  • STTH12002TV,HIGH EFFICIENCY ULTRAFAST DIODE
  • Dual center tap rectifier STTH12002TV suited for welding equipment and high power industrial application. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. ...
  • STTH120R04TV,Ultrafast Recovery Diode
  • The STTH120R04TV series uses ST\'s new 400 V planar Pt doping technology. The STTH120R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. ...
  • STTH12012TV,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode,The high quality design of this diode STTH12012TV has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH1210,Ultrafast Recovery - High Voltage Diode
  • Ultrafast recovery - high voltage diode STTH1210 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrins ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH1212,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode,The high quality design of this diode STTH1212 has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH1512,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode STTH1512 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH212,High Voltage Ultrafast Diode
  • High voltage ultrafast diode,The STTH212, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. ...
  • STTH3010,Ultrafast Recovery - High Voltage Diode
  • Ultrafast recovery - high voltage diode STTH3010 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH3012,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode STTH3012 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH312,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode, STTH312 The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH512,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode STTH512 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH6010,Ultrafast Recovery - High Voltage Diode
  • Ultrafast recovery - high voltage diode STTH6010 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...
  • STTH6012,Ultrafast Recovery - 1200 V Diode
  • Ultrafast recovery - 1200 V diode STTH6012 ,The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty ...