Dynex Semiconductor
datasheet
Dynex Semiconductor
Dynex Semiconductor is a global supplier of products and services specialising in the field of power semiconductors and integrated circuit products. The Company's power products are used to improve the efficiency, reliability and quality of the electric power in; - power transmission and distribution, - alternative power generation, - marine and rail propulsion, - aerospace, - medical equipment, - heavy industries such as steel and mining, - telecommunications and - electric vehicles. The Dynex power semiconductor business was originally established in Lincoln over 50 years ago when it was known as AEI Semiconductors Ltd. At that time, the business introduced some of the first silicon based power semiconductor components in the world. Since then we have acquired the power semiconductor interests, technologies and products from such major names such as GEC, SGS-Thomson, Alstom and Marconi Electronic Devices Ltd (MEDL). Today the headquarters for Dynex Semiconductor, together with manufacturing, silicon fabrication, sales, marketing, design and research & development, are co-located in Lincoln, UK. This well equipped modern facility, includes in excess of 4,000 square metres of recently refurbished clean rooms dedicated to the manufacture of power semiconductor products synonymous with innovation, quality and reliability. Power Semiconductors - IGBT
Dynex offer a range of IGBT module and die products. The module family includes products with voltage ratings from 600V to 3,300V and current ratings from 200A to 3,600A. Switch configurations include bi-directional switch, single, dual, chopper and half bridge options. Modules are designed and constructed to meet the most rigorous performance requirements in the market. Our IGBT technology is developed in-house by the Dynex R&D team, and manufactured in the dedicated wafer fab facilities located in Lincoln, ensuring complete control of the manufacturing process from dice through to tested modules. All IGBT and FRD die are also available in wafer, die on film or waffle pack form. Dynex is a truly independent source of high power IGBT technology for high reliability applications including railway traction, induction heating, windpower generators, industrial motor drives and electric vehicles. Power Semiconductors - Bipolar Dynex also manufacture a comprehensive range of Phase Control Thyristors (SCR), Rectifier Diodes, Asymmetric and Fast Turn-off Thyristors, Gate Turn-off Thyristors (GTO), Pulse Power Thyristors and Fast Recovery Diodes. Voltages range from 1200V for direct connection to 416V supplies to 6500V for high voltage applications. Average current ratings range from a few hundred amps to 11,000A. Dynex can supply these products together with its own range of high quality clamps to facilitate their attachment to customers' own heatsinks. Alternatively Dynex can produce a thermal design for customer's equipment and supply the semiconductors ready mounted together with heatsinks, snubbers and sharing components. Power Semiconductors - Power Assemblies The Power Assembly Complete solutions (PACs) group provide a design and build service utlising the skills of Dynex power electronics, mechanical and electronic engineers who can provide a complete solution to customer requirements including protection and control electronics. Dynex engineers have direct access to the company's application, test and product design personnel to offer you the optimum solution.

  • MA17502   Radiation Hard MIL-STD-1750A Control Unit
  • MA17501   Radiation Hard MIL-STD-1750A Execution Unit
  • GP200MLS12   IGBT Chopper Module Preliminary Information
  • GP200MKS12   IGBT Chopper Module Preliminary Information
  • MA28151   Radiation Hard Programmable Communication Interface
  • GP400DDM12   Dual Switch IGBT Module Advance Information
  • ACR44U   Fast Turn-off Asymmetric Thyristor
  • GP401DDS18   Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
  • GP1600FSS12   Powerline N-Channel Single Switch IGBT Module Advance Information
  • GP1200ESM33   High Reliability Single Switch IGBT Module Advance Information
  • GP400DDS18   Dual Switch IGBT Module Preliminary Information
  • GP400DDS12   Powerline N-Channel Dual Switch IGBT Module
  • GP401LSS18   Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
  • TK26   Phase Control Thyristor Semiconductor
  • TK12   Phase Control Thyristor Semiconductor
  • MA3690   1553b Bus Controller/remote Terminal Semiconductor
  • MA31755   16-bit Feedthrough Error Detection & Correction Unit Edac
  • MP04TT600   Dual Thyristor Water Cooled Module Preliminary Information Semiconductor
  • MP04TT500   Dual Thyristor Water Cooled Module Advance Information Semiconductor
  • MP04TT1550   Dual Thyristor Water Cooled Welding Module Preliminary Information
  • MP04TT1400   Dual Thyristor Water Cooled Welding Module Preliminary Information Semiconductor
  • MP04HB910   Dual Rectifier Diode Module Preliminary Information Semiconductor
  • MP04DD810   Dual Rectifier Diode Water Cooled Module Preliminary Information Semiconductor
  • MDFB51   Fast Recovery Diode Semiconductor
  • GP801FSM18   Hi-reliability Single Switch Low Vce(sat) Igbt Module
  • GP801DDS18   Dual Switch Low Vce(sat) Igbt Module Semiconductor
  • GP801DDM18   Hi-reliability Dual Switch Low Vcesat Igbt Module Semiconductor
  • GP801DCS18   Chopper Switch Low Vcesat Igbt Module Semiconductor
  • GP801DCM18   Hi-reliability Chopper Switch Low Vcesat Igbt Module Semiconductor
  • GP800NSS33   Single Switch Igbt Module Preliminary Information
  • GP800NSM33   Hi-reliability Single Switch Igbt Module Preliminary Information Semiconductor
  • GP800FSS12   Powerline N-channel Single Switch Igbt Module Preliminary Information Semiconductor
  • GP800FSM18   Hi-reliability Single Switch Igbt Module Semiconductor
  • GP800DDS12   Powerline N-channel Dual Switch Igbt Module Semiconductor
  • GP800DDM12   Hi-reliability Dual Switch Igbt Module Advance Information
  • GP2401ESM18   Hi-reliability Single Switch Low Vce(sat) Igbt Module Semiconductor
  • GP2400ESM18   Hi-reliability Single Switch Igbt Module Semiconductor
  • DCR5980Z   Phase Control Thyristor Target Information
  • DFB54   Fast Recovery Diode Semiconductor
  • DF752   Fast Recovery Diode Semiconductor
  • DF685   Fast Recovery Diode Semiconductor
  • DF654   Fast Recovery Diode Semiconductor
  • DF252   Fast Recovery Diode Semiconductor
  • XT2116   Fast Turn-on Asymmetric Thyristor Semiconductor
  • MA31753   Silicon-on-Sapphire ICs - Peripherals And Support Circuits
  • MA31751   Silicon-on-Sapphire ICs - Peripherals And Support Circuits
  • MA28155   Silicon-on-Sapphire ICs - Peripherals And Support Circuits
  • MAS281   Silicon-on-Sapphire ICs - Microprocessors
  • MA31750   Silicon-on-Sapphire ICs - Microprocessors
  • MA17503   Silicon-on-Sapphire ICs - Microprocessors
  • MA9264   Radiation Hard 8192x8 Bit Static RAM
  • MA5114   Radiation Hard 1024x4 Bit Static RAM
  • MA7001   Radiation Hard 512x9 Bit FIFO
  • 54HSC   Silicon-on-Sapphire ICs - Logics
  • DW9274   Surface Acoustic Wave (SAW) Filters - 50-99MHz
  • DCR960G28   I2 Phase Control SCRs (Thyristors) - 2800V
  • DW9255   35.42MHz SAW Filter For GPS Receivers
  • DNB63   Rectifier Diodes - 1800V
  • MA28139   Silicon-on-Sapphire ICs - Databus
  • MA1916   Silicon-on-Sapphire ICs - Databus
  • ACR300SG33   Pulsed Power Thyristors (SCRs) And Assemblies
  • PT85QWX45   Pulsed Power Thyristors (SCRs) And Assemblies
  • PT60QHX45   Pulsed Power Thyristors (SCRs) And Assemblies
  • PT40QPX45   Pulsed Power Thyristors (SCRs) And Assemblies
  • DCR504ST   Phase Control Thyristors (SCR) - 1400V
  • DGT304RE   Gate Turn-off (GTO) Thyristors - 1300V
  • DGT304SE   Gate Turn-off (GTO) Thyristors - 1300V
  • DF451   Fast Recovery Diodes - 1600V
  • DCR810F85   I2 Phase Control SCRs (Thyristors) - 8500V
  • DCR760N85   I2 Phase Control SCRs (Thyristors) - 8500V
  • DCR470G85   I2 Phase Control SCRs (Thyristors) - 8500V
  • DCR390J85   I2 Phase Control SCRs (Thyristors) - 8500V
  • DCR950F65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR890N65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR890F65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR820N65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR590G65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR490J65   I2 Phase Control SCRs (Thyristors) - 6500V
  • DCR1660Y   Phase Control Thyristors (SCR) - 6500V
  • DCR1260Y   Phase Control Thyristors (SCR) - 6500V
  • DCR820SG   Phase Control Thyristors (SCR) - 6500V
  • DCR690G52   I2 Phase Control SCRs (Thyristors) - 5200v
  • DCR840F   Phase Control Thyristors (SCR) - 4800V
  • DCR818SG   Phase Control Thyristors (SCR) - 4800V
  • DCR1050F   Phase Control Thyristors (SCR) - 4800V
  • DNB65   Rectifier Diodes - 4500V
  • DCR780G42   I2 Phase Control SCRs (Thyristors) - 4200V
  • DNB64   Rectifier Diodes - 4000V
  • DF051   Fast Recovery Diodes - 2500V
  • DNB61   Rectifier Diodes - 3000V
  • DCR806SG   Phase Control Thyristors (SCR) - 2800V
  • DCR604SE   Phase Control Thyristors (SCR) - 2800V
  • MDFB85   Fast Recovery Diodes - 4500V